Paper Abstract and Keywords |
Presentation |
2004-12-03 11:20
Research on Sb-based quantum dot vertical-cavity surface-emitting lasers for optical communication systems Naokatsu Yamamoto, Kouichi Akahane, Shin-ichirou Gozu, Akio Ueta, Naoki Ohtani (NICT) Link to ES Tech. Rep. Archives: LQE2004-121 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this report, we successfully demonstrated an optical-communication wavelength lasing operation from an Sb-based quantum dot vertical cavity surface emitting laser (Sb-based QD-VCSEL) fabricated on GaAs(001) substrates. An Sb-based QDs as a new-active material was used for an active-region in a AlGaAs/GaAs micro-cavity structure. The high-density InGaSb QDs materials was formed on GaAs surface by a solid-source molecular beam epitaxy (MBE) with using a silicon atoms irradiation technique. As results, a 1.34 μm CW lasing operation from Sb-based QD-VCSEL can be achieved with a current injection at room-temperature. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
VCSEL (VCL) / GaAs / 1.3-1.55μm optical-communication wavebands / Sb-based quantum dot / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 104, no. 484, LQE2004-121, pp. 15-20, Dec. 2004. |
Paper # |
LQE2004-121 |
Date of Issue |
2004-11-26 (LQE) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
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Link to ES Tech. Rep. Archives: LQE2004-121 |