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| Presentation | 2005-01-18 14:25 - -, -, -, - (OKI) Link to ES Tech. Rep. Archives:  ED2004-221 MW2004-228 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The device performances of double-recessed 0.1-µm-gate pseudomorphic InP-based high electron mobility transistors (InP-HEMTs) have been investigated in terms of the indium composition in the InxGa1-xAs channel. By using the double-recessed gate structure for the InP-HEMTs, excellent high breakdown voltage characteristics have been achieved. The drain-to-source breakdown voltage (BVds) of as high as 9 V for the InP-HEMT with XIn of 0.53, and 4.5 V and 3 V even for the pseudomorphic InP-HEMTs with XIn of 0.6 and 0.7 have been obtained. The transconductance (gm) and the current-gain cutoff-frequency (fT) improve with increasing the XIn, and superior gm and fT of as high as 2.18 S/mm and 257.8 GHz have been obtained for the pseudomorphic InP-HEMT with XIn of 0.7. The propagation delay (tpd) measured from the SCFL ring-oscillator implemented by the InP-HEMTs decreases as increasing the XIn and the tpd of as fast as 4.9 psec/gate has been obtained for the pseudomorphic InP-HEMT with XIn of 0.7. We have also measured the noise figure (NFmin) of the InP-HEMTs and obtained the ultra low NFmin of 1 dB at 38 GHz. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | pseudomorphic InP-based HEMT / double-recessed-gate structure / drain-to-source breakdown voltage (BVds) / current gain cutoff frequency (fT) / transconductance (gm) / propagation delay (tpd) / noise figure (NFmin) / | |
| Reference Info. | IEICE Tech. Rep., vol. 104, no. 550, ED2004-221, pp. 53-58, Jan. 2005. | |
| Paper # | ED2004-221 | |
| Date of Issue | 2005-01-11 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: ED2004-221 MW2004-228 |
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| Conference Information | |
| Committee | MW ED |
| Conference Date | 2005-01-17 - 2005-01-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2005-01-MW-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | - |
| Sub Title (in English) | |
| Keyword(1) | pseudomorphic InP-based HEMT |
| Keyword(2) | double-recessed-gate structure |
| Keyword(3) | drain-to-source breakdown voltage (BVds) |
| Keyword(4) | current gain cutoff frequency (fT) |
| Keyword(5) | transconductance (gm) |
| Keyword(6) | propagation delay (tpd) |
| Keyword(7) | noise figure (NFmin) |
| Keyword(8) | |
| 1st Author's Name | - |
| 1st Author's Affiliation | Oki Electric Industry (OKI) |
| 2nd Author's Name | - |
| 2nd Author's Affiliation | Oki Electric Industry (OKI) |
| 3rd Author's Name | - |
| 3rd Author's Affiliation | Oki Electric Industry (OKI) |
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| 4th Author's Affiliation | Oki Electric Industry (OKI) |
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| Speaker | Author-1 |
| Date Time | 2005-01-18 14:25:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2004-221, MW2004-228 |
| Volume (vol) | vol.104 |
| Number (no) | no.550(ED), no.552(MW) |
| Page | pp.53-58 |
| #Pages | 6 |
| Date of Issue | 2005-01-11 (ED, MW) |
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