Paper Abstract and Keywords |
Presentation |
2005-04-14 09:30
Low-Power Embedded SRAM Modules with Expanded Margins for Writing Masanao Yamaoka (Hitachi, Ltd.), Noriaki Maeda (Renesas), Yoshihiro Shinozaki (Hitachi ULSI), Yasuhisa Shimazaki, Koji Nii, Shigeru Shimada, Kazumasa Yanagisawa (Renesas), Takayuki Kawahara (Hitachi, Ltd.) Link to ES Tech. Rep. Archives: ICD2005-2 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The power consumption of a low-power SoC has a battery life of mobile appliances. The general SoCs have large on-chip SRAMs, which consume a large proportion of whole LSI power. For realizing a low-power SoC, we have developed embedded SRAM modules, which use writing margin expanding technique, rocess variation adaptive writing replica circuit and reducing leakage current technique. These low-power techniques enable the SRAM modules to achieve low active and
low standby power consumption. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Low-power SRAM / Low-power SoC / write margin / low-leakage word-line driver / replica circuit / / / |
Reference Info. |
IEICE Tech. Rep., vol. 105, no. 1, ICD2005-2, pp. 7-12, April 2005. |
Paper # |
ICD2005-2 |
Date of Issue |
2005-04-07 (ICD) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
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Link to ES Tech. Rep. Archives: ICD2005-2 |
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