IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2005-04-14 11:40
A 128Mb DRAM Using a 1T Gain Cell(FBC) on SOI
Takashi Ohsawa, Katsuyuki Fujita, Kosuke Hatsuda (Toshiba), Tomoki Higashi (Toshiba Microelectronics), Mutsuo Morikado, Yoshihiro Minami, Tomoaki Shino, Hiroomi Nakajima, Kazumi Inoh, Takeshi Hamamoto, Shigeyoshi Watanabe (Toshiba) Link to ES Tech. Rep. Archives: ICD2005-5
Abstract (in Japanese) (See Japanese page) 
(in English) We report on a 128Mbit DRAM design using the capacitor-less DRAM cell or the floating body cell(FBC) on SOI. The cell of data “1” is necessary to be restored after read due to charge pumping. It is also important to reduce the refresh busy rate. We place a sense amplifier per bit line in order to fulfill those requirements and operate them asymmetrically between a minority number of selected ones and a majority number of unselected ones, leading to about 50% power reduction on the average compared with the conventional symmetrical operation. A dummy cell system where 128 “1” cells and 128 “0” cells are read and are averaged is shown to be very useful to obtain a very accurate reference current source to distinguish the data “1” and “0”, since the system reduces its dispersion drastically. We show that 18.5ns random access time is simulated with all cells in the 128Mb DRAM functional having a reasonable amount of redundancy.
Keyword (in Japanese) (See Japanese page) 
(in English) SOI / Capacitor-less DRAM / FBC / Gain Cell / Embedded Memory / / /  
Reference Info. IEICE Tech. Rep., vol. 105, no. 1, ICD2005-5, pp. 23-28, April 2005.
Paper # ICD2005-5 
Date of Issue 2005-04-07 (ICD) 
ISSN Print edition: ISSN 0913-5685
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF Link to ES Tech. Rep. Archives: ICD2005-5

Conference Information
Committee ICD  
Conference Date 2005-04-14 - 2005-04-15 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2005-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A 128Mb DRAM Using a 1T Gain Cell(FBC) on SOI 
Sub Title (in English)  
Keyword(1) SOI  
Keyword(2) Capacitor-less DRAM  
Keyword(3) FBC  
Keyword(4) Gain Cell  
Keyword(5) Embedded Memory  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Takashi Ohsawa  
1st Author's Affiliation Toshiba Corporation Semiconductor Company (Toshiba)
2nd Author's Name Katsuyuki Fujita  
2nd Author's Affiliation Toshiba Corporation Semiconductor Company (Toshiba)
3rd Author's Name Kosuke Hatsuda  
3rd Author's Affiliation Toshiba Corporation Semiconductor Company (Toshiba)
4th Author's Name Tomoki Higashi  
4th Author's Affiliation Toshiba Microelectronics Corporation (Toshiba Microelectronics)
5th Author's Name Mutsuo Morikado  
5th Author's Affiliation Toshiba Corporation Semiconductor Company (Toshiba)
6th Author's Name Yoshihiro Minami  
6th Author's Affiliation Toshiba Corporation Semiconductor Company (Toshiba)
7th Author's Name Tomoaki Shino  
7th Author's Affiliation Toshiba Corporation Semiconductor Company (Toshiba)
8th Author's Name Hiroomi Nakajima  
8th Author's Affiliation Toshiba Corporation Semiconductor Company (Toshiba)
9th Author's Name Kazumi Inoh  
9th Author's Affiliation Toshiba Corporation Semiconductor Company (Toshiba)
10th Author's Name Takeshi Hamamoto  
10th Author's Affiliation Toshiba Corporation Semiconductor Company (Toshiba)
11th Author's Name Shigeyoshi Watanabe  
11th Author's Affiliation Toshiba Corporation Semiconductor Company (Toshiba)
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2005-04-14 11:40:00 
Presentation Time 30 minutes 
Registration for ICD 
Paper # ICD2005-5 
Volume (vol) vol.105 
Number (no) no.1 
Page pp.23-28 
#Pages
Date of Issue 2005-04-07 (ICD) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan