Paper Abstract and Keywords |
Presentation |
2005-04-14 11:40
A 128Mb DRAM Using a 1T Gain Cell(FBC) on SOI Takashi Ohsawa, Katsuyuki Fujita, Kosuke Hatsuda (Toshiba), Tomoki Higashi (Toshiba Microelectronics), Mutsuo Morikado, Yoshihiro Minami, Tomoaki Shino, Hiroomi Nakajima, Kazumi Inoh, Takeshi Hamamoto, Shigeyoshi Watanabe (Toshiba) Link to ES Tech. Rep. Archives: ICD2005-5 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We report on a 128Mbit DRAM design using the capacitor-less DRAM cell or the floating body cell(FBC) on SOI. The cell of data “1” is necessary to be restored after read due to charge pumping. It is also important to reduce the refresh busy rate. We place a sense amplifier per bit line in order to fulfill those requirements and operate them asymmetrically between a minority number of selected ones and a majority number of unselected ones, leading to about 50% power reduction on the average compared with the conventional symmetrical operation. A dummy cell system where 128 “1” cells and 128 “0” cells are read and are averaged is shown to be very useful to obtain a very accurate reference current source to distinguish the data “1” and “0”, since the system reduces its dispersion drastically. We show that 18.5ns random access time is simulated with all cells in the 128Mb DRAM functional having a reasonable amount of redundancy. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
SOI / Capacitor-less DRAM / FBC / Gain Cell / Embedded Memory / / / |
Reference Info. |
IEICE Tech. Rep., vol. 105, no. 1, ICD2005-5, pp. 23-28, April 2005. |
Paper # |
ICD2005-5 |
Date of Issue |
2005-04-07 (ICD) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
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Link to ES Tech. Rep. Archives: ICD2005-5 |