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| Presentation | 2005-08-19 10:45 HfSiON Gate Dielectrics Design for Mixed Signal CMOS Kenji Kojima, Ryosuke Iijima, Tatsuya Ohguro, Takeshi Watanabe, Mariko Takayanagi, Hisayo S. Momose, Kazunari Ishimaru, Hidemi Ishiuchi (TOSHIBA) Link to ES Tech. Rep. Archives:  SDM2005-147 ICD2005-86 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | (Advance abstract in Japanese is available) | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | / / / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 105, no. 233, SDM2005-147, pp. 25-30, Aug. 2005. | |
| Paper # | SDM2005-147 | |
| Date of Issue | 2005-08-12 (SDM, ICD) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: SDM2005-147 ICD2005-86 |
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| Conference Information | |
| Committee | ICD SDM |
| Conference Date | 2005-08-18 - 2005-08-19 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | HAKODATE KOKUSAI HOTEL |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | VLSI Circuits, Device Technologies (High Speed, Low Voltage, Low Power), etc |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2005-08-ICD-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | HfSiON Gate Dielectrics Design for Mixed Signal CMOS |
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| 1st Author's Name | Kenji Kojima |
| 1st Author's Affiliation | SoC R&D Center, Toshiba Corporation Semiconductor Company (TOSHIBA) |
| 2nd Author's Name | Ryosuke Iijima |
| 2nd Author's Affiliation | Research & Development Center, Toshiba Corporation (TOSHIBA) |
| 3rd Author's Name | Tatsuya Ohguro |
| 3rd Author's Affiliation | SoC R&D Center, Toshiba Corporation Semiconductor Company (TOSHIBA) |
| 4th Author's Name | Takeshi Watanabe |
| 4th Author's Affiliation | SoC R&D Center, Toshiba Corporation Semiconductor Company (TOSHIBA) |
| 5th Author's Name | Mariko Takayanagi |
| 5th Author's Affiliation | SoC R&D Center, Toshiba Corporation Semiconductor Company (TOSHIBA) |
| 6th Author's Name | Hisayo S. Momose |
| 6th Author's Affiliation | SoC R&D Center, Toshiba Corporation Semiconductor Company (TOSHIBA) |
| 7th Author's Name | Kazunari Ishimaru |
| 7th Author's Affiliation | SoC R&D Center, Toshiba Corporation Semiconductor Company (TOSHIBA) |
| 8th Author's Name | Hidemi Ishiuchi |
| 8th Author's Affiliation | SoC R&D Center, Toshiba Corporation Semiconductor Company (TOSHIBA) |
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| Speaker | Author-1 |
| Date Time | 2005-08-19 10:45:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2005-147, ICD2005-86 |
| Volume (vol) | vol.105 |
| Number (no) | no.233(SDM), no.235(ICD) |
| Page | pp.25-30 |
| #Pages | 6 |
| Date of Issue | 2005-08-12 (SDM, ICD) |
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