Paper Abstract and Keywords |
Presentation |
2005-10-13 13:30
C-band AlGaN/GaN HEMTs with 170W Output Power Yoshiharu Takada, Hiroyuki Sakurai, Keiichi Matsushita, Kazutoshi Masuda, Shinji Takatsuka, Masahiko Kuraguchi, Takuma Suzuki, Takashi Suzuki, Mayumi Hirose, Hisao Kawasaki, Kazutaka Takagi, Kunio Tsuda (Toshiba) Link to ES Tech. Rep. Archives: ED2005-126 CPM2005-113 LQE2005-53 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
As a promising candidate for next generation microwave power devices, AlGaN/GaN HEMTs have attracted much research interest. There are many reports related to high output power characteristics for L band applications. However, not many papers reported high power characteristics of AlGaN/GaN HEMTs for C band applications, such as satellite communication systems. In this work, we present C-band high power multi-chip AlGaN/GaN HEMTs. At 6GHz, the packaged device using four 11.52mm die and independent internal matching circuits delivered over 170W output power under pulsed operating condition. To the best of our knowledge, this is the highest output power ever reported for AlGaN/GaN HEMTs at this frequency. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlGaN / GaN / HEMT / 174W / high power / channel temperature / / |
Reference Info. |
IEICE Tech. Rep., vol. 105, no. 325, ED2005-126, pp. 39-42, Oct. 2005. |
Paper # |
ED2005-126 |
Date of Issue |
2005-10-06 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
Link to ES Tech. Rep. Archives: ED2005-126 CPM2005-113 LQE2005-53 |
Conference Information |
Committee |
LQE ED CPM |
Conference Date |
2005-10-13 - 2005-10-15 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Ritsumeikan Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
Paper Information |
Registration To |
ED |
Conference Code |
2005-10-LQE-ED-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
C-band AlGaN/GaN HEMTs with 170W Output Power |
Sub Title (in English) |
|
Keyword(1) |
AlGaN |
Keyword(2) |
GaN |
Keyword(3) |
HEMT |
Keyword(4) |
174W |
Keyword(5) |
high power |
Keyword(6) |
channel temperature |
Keyword(7) |
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Keyword(8) |
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1st Author's Name |
Yoshiharu Takada |
1st Author's Affiliation |
Toshiba (Toshiba) |
2nd Author's Name |
Hiroyuki Sakurai |
2nd Author's Affiliation |
Toshiba (Toshiba) |
3rd Author's Name |
Keiichi Matsushita |
3rd Author's Affiliation |
Toshiba (Toshiba) |
4th Author's Name |
Kazutoshi Masuda |
4th Author's Affiliation |
Toshiba (Toshiba) |
5th Author's Name |
Shinji Takatsuka |
5th Author's Affiliation |
Toshiba (Toshiba) |
6th Author's Name |
Masahiko Kuraguchi |
6th Author's Affiliation |
Toshiba (Toshiba) |
7th Author's Name |
Takuma Suzuki |
7th Author's Affiliation |
Toshiba (Toshiba) |
8th Author's Name |
Takashi Suzuki |
8th Author's Affiliation |
Toshiba (Toshiba) |
9th Author's Name |
Mayumi Hirose |
9th Author's Affiliation |
Toshiba (Toshiba) |
10th Author's Name |
Hisao Kawasaki |
10th Author's Affiliation |
Toshiba (Toshiba) |
11th Author's Name |
Kazutaka Takagi |
11th Author's Affiliation |
Toshiba (Toshiba) |
12th Author's Name |
Kunio Tsuda |
12th Author's Affiliation |
Toshiba (Toshiba) |
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Speaker |
Author-1 |
Date Time |
2005-10-13 13:30:00 |
Presentation Time |
20 minutes |
Registration for |
ED |
Paper # |
ED2005-126, CPM2005-113, LQE2005-53 |
Volume (vol) |
vol.105 |
Number (no) |
no.325(ED), no.327(CPM), no.329(LQE) |
Page |
pp.39-42 |
#Pages |
4 |
Date of Issue |
2005-10-06 (ED, CPM, LQE) |
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