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Paper Abstract and Keywords
Presentation 2005-10-13 13:30
C-band AlGaN/GaN HEMTs with 170W Output Power
Yoshiharu Takada, Hiroyuki Sakurai, Keiichi Matsushita, Kazutoshi Masuda, Shinji Takatsuka, Masahiko Kuraguchi, Takuma Suzuki, Takashi Suzuki, Mayumi Hirose, Hisao Kawasaki, Kazutaka Takagi, Kunio Tsuda (Toshiba) Link to ES Tech. Rep. Archives: ED2005-126 CPM2005-113 LQE2005-53
Abstract (in Japanese) (See Japanese page) 
(in English) As a promising candidate for next generation microwave power devices, AlGaN/GaN HEMTs have attracted much research interest. There are many reports related to high output power characteristics for L band applications. However, not many papers reported high power characteristics of AlGaN/GaN HEMTs for C band applications, such as satellite communication systems. In this work, we present C-band high power multi-chip AlGaN/GaN HEMTs. At 6GHz, the packaged device using four 11.52mm die and independent internal matching circuits delivered over 170W output power under pulsed operating condition. To the best of our knowledge, this is the highest output power ever reported for AlGaN/GaN HEMTs at this frequency.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaN / GaN / HEMT / 174W / high power / channel temperature / /  
Reference Info. IEICE Tech. Rep., vol. 105, no. 325, ED2005-126, pp. 39-42, Oct. 2005.
Paper # ED2005-126 
Date of Issue 2005-10-06 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF Link to ES Tech. Rep. Archives: ED2005-126 CPM2005-113 LQE2005-53

Conference Information
Committee LQE ED CPM  
Conference Date 2005-10-13 - 2005-10-15 
Place (in Japanese) (See Japanese page) 
Place (in English) Ritsumeikan Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Paper Information
Registration To ED 
Conference Code 2005-10-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) C-band AlGaN/GaN HEMTs with 170W Output Power 
Sub Title (in English)  
Keyword(1) AlGaN  
Keyword(2) GaN  
Keyword(3) HEMT  
Keyword(4) 174W  
Keyword(5) high power  
Keyword(6) channel temperature  
Keyword(7)  
Keyword(8)  
1st Author's Name Yoshiharu Takada  
1st Author's Affiliation Toshiba (Toshiba)
2nd Author's Name Hiroyuki Sakurai  
2nd Author's Affiliation Toshiba (Toshiba)
3rd Author's Name Keiichi Matsushita  
3rd Author's Affiliation Toshiba (Toshiba)
4th Author's Name Kazutoshi Masuda  
4th Author's Affiliation Toshiba (Toshiba)
5th Author's Name Shinji Takatsuka  
5th Author's Affiliation Toshiba (Toshiba)
6th Author's Name Masahiko Kuraguchi  
6th Author's Affiliation Toshiba (Toshiba)
7th Author's Name Takuma Suzuki  
7th Author's Affiliation Toshiba (Toshiba)
8th Author's Name Takashi Suzuki  
8th Author's Affiliation Toshiba (Toshiba)
9th Author's Name Mayumi Hirose  
9th Author's Affiliation Toshiba (Toshiba)
10th Author's Name Hisao Kawasaki  
10th Author's Affiliation Toshiba (Toshiba)
11th Author's Name Kazutaka Takagi  
11th Author's Affiliation Toshiba (Toshiba)
12th Author's Name Kunio Tsuda  
12th Author's Affiliation Toshiba (Toshiba)
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Speaker Author-1 
Date Time 2005-10-13 13:30:00 
Presentation Time 20 minutes 
Registration for ED 
Paper # ED2005-126, CPM2005-113, LQE2005-53 
Volume (vol) vol.105 
Number (no) no.325(ED), no.327(CPM), no.329(LQE) 
Page pp.39-42 
#Pages
Date of Issue 2005-10-06 (ED, CPM, LQE) 


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