Paper Abstract and Keywords |
Presentation |
2005-10-13 10:10
(11-20) InN Growth on Nitridated (10-12) Sapphire by ECR-MBE
-- Investigation of Non-polar InN -- Yuya Kumagai, Akihiro Tsuyuguchi, Kuniko Teraki, Tsutomu Araki, Hiroyuki Naoi, Yasushi Nanishi (Ritsumeikan Univ.) Link to ES Tech. Rep. Archives: ED2005-120 CPM2005-107 LQE2005-47 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A-plane (11-20) InN has been successfully grown on R-plane (10-12) sapphire substrate by electron cyclotron resonance plasma-exited molecular beam epitaxy through substrate nitridation process. The substrate nitridation of R-plane sapphire by ECR nitrogen plasma was carried out at 430°C for 10 and 15 minutes. The results of reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Photoluminescence (PL) indicated the formation of A-plane InN on R-plane sapphire. Inclusion of cubic InN was also observed together with A-plane InN through RHEED and XRD measurements in case of A-plane InN layer grown on 10 min nitridated substrate. However, when the nitridation time of R-plane sapphire by ECR nitrogen plasma increased to 15 minutes, it is confirmed that formation of cubic InN was successfully suppressed. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
ECR-MBE / substrate nitridation / R-plane (10-12) sapphire / A-plane (11-20) InN / cubic InN / / / |
Reference Info. |
IEICE Tech. Rep., vol. 105, no. 327, CPM2005-107, pp. 9-12, Oct. 2005. |
Paper # |
CPM2005-107 |
Date of Issue |
2005-10-06 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
Link to ES Tech. Rep. Archives: ED2005-120 CPM2005-107 LQE2005-47 |
Conference Information |
Committee |
LQE ED CPM |
Conference Date |
2005-10-13 - 2005-10-15 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Ritsumeikan Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
Paper Information |
Registration To |
CPM |
Conference Code |
2005-10-LQE-ED-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
(11-20) InN Growth on Nitridated (10-12) Sapphire by ECR-MBE |
Sub Title (in English) |
Investigation of Non-polar InN |
Keyword(1) |
ECR-MBE |
Keyword(2) |
substrate nitridation |
Keyword(3) |
R-plane (10-12) sapphire |
Keyword(4) |
A-plane (11-20) InN |
Keyword(5) |
cubic InN |
Keyword(6) |
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1st Author's Name |
Yuya Kumagai |
1st Author's Affiliation |
Ritsumeikan University (Ritsumeikan Univ.) |
2nd Author's Name |
Akihiro Tsuyuguchi |
2nd Author's Affiliation |
Ritsumeikan University (Ritsumeikan Univ.) |
3rd Author's Name |
Kuniko Teraki |
3rd Author's Affiliation |
Ritsumeikan University (Ritsumeikan Univ.) |
4th Author's Name |
Tsutomu Araki |
4th Author's Affiliation |
Ritsumeikan University (Ritsumeikan Univ.) |
5th Author's Name |
Hiroyuki Naoi |
5th Author's Affiliation |
Ritsumeikan University (Ritsumeikan Univ.) |
6th Author's Name |
Yasushi Nanishi |
6th Author's Affiliation |
Ritsumeikan University (Ritsumeikan Univ.) |
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Speaker |
Author-1 |
Date Time |
2005-10-13 10:10:00 |
Presentation Time |
20 minutes |
Registration for |
CPM |
Paper # |
ED2005-120, CPM2005-107, LQE2005-47 |
Volume (vol) |
vol.105 |
Number (no) |
no.325(ED), no.327(CPM), no.329(LQE) |
Page |
pp.9-12 |
#Pages |
4 |
Date of Issue |
2005-10-06 (ED, CPM, LQE) |
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