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Paper Abstract and Keywords
Presentation 2005-10-13 10:10
(11-20) InN Growth on Nitridated (10-12) Sapphire by ECR-MBE -- Investigation of Non-polar InN --
Yuya Kumagai, Akihiro Tsuyuguchi, Kuniko Teraki, Tsutomu Araki, Hiroyuki Naoi, Yasushi Nanishi (Ritsumeikan Univ.) Link to ES Tech. Rep. Archives: ED2005-120 CPM2005-107 LQE2005-47
Abstract (in Japanese) (See Japanese page) 
(in English) A-plane (11-20) InN has been successfully grown on R-plane (10-12) sapphire substrate by electron cyclotron resonance plasma-exited molecular beam epitaxy through substrate nitridation process. The substrate nitridation of R-plane sapphire by ECR nitrogen plasma was carried out at 430°C for 10 and 15 minutes. The results of reflection high-energy electron diffraction (RHEED), X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Photoluminescence (PL) indicated the formation of A-plane InN on R-plane sapphire. Inclusion of cubic InN was also observed together with A-plane InN through RHEED and XRD measurements in case of A-plane InN layer grown on 10 min nitridated substrate. However, when the nitridation time of R-plane sapphire by ECR nitrogen plasma increased to 15 minutes, it is confirmed that formation of cubic InN was successfully suppressed.
Keyword (in Japanese) (See Japanese page) 
(in English) ECR-MBE / substrate nitridation / R-plane (10-12) sapphire / A-plane (11-20) InN / cubic InN / / /  
Reference Info. IEICE Tech. Rep., vol. 105, no. 327, CPM2005-107, pp. 9-12, Oct. 2005.
Paper # CPM2005-107 
Date of Issue 2005-10-06 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685
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Download PDF Link to ES Tech. Rep. Archives: ED2005-120 CPM2005-107 LQE2005-47

Conference Information
Committee LQE ED CPM  
Conference Date 2005-10-13 - 2005-10-15 
Place (in Japanese) (See Japanese page) 
Place (in English) Ritsumeikan Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Paper Information
Registration To CPM 
Conference Code 2005-10-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) (11-20) InN Growth on Nitridated (10-12) Sapphire by ECR-MBE 
Sub Title (in English) Investigation of Non-polar InN 
Keyword(1) ECR-MBE  
Keyword(2) substrate nitridation  
Keyword(3) R-plane (10-12) sapphire  
Keyword(4) A-plane (11-20) InN  
Keyword(5) cubic InN  
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Keyword(7)  
Keyword(8)  
1st Author's Name Yuya Kumagai  
1st Author's Affiliation Ritsumeikan University (Ritsumeikan Univ.)
2nd Author's Name Akihiro Tsuyuguchi  
2nd Author's Affiliation Ritsumeikan University (Ritsumeikan Univ.)
3rd Author's Name Kuniko Teraki  
3rd Author's Affiliation Ritsumeikan University (Ritsumeikan Univ.)
4th Author's Name Tsutomu Araki  
4th Author's Affiliation Ritsumeikan University (Ritsumeikan Univ.)
5th Author's Name Hiroyuki Naoi  
5th Author's Affiliation Ritsumeikan University (Ritsumeikan Univ.)
6th Author's Name Yasushi Nanishi  
6th Author's Affiliation Ritsumeikan University (Ritsumeikan Univ.)
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Speaker Author-1 
Date Time 2005-10-13 10:10:00 
Presentation Time 20 minutes 
Registration for CPM 
Paper # ED2005-120, CPM2005-107, LQE2005-47 
Volume (vol) vol.105 
Number (no) no.325(ED), no.327(CPM), no.329(LQE) 
Page pp.9-12 
#Pages
Date of Issue 2005-10-06 (ED, CPM, LQE) 


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