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| Presentation | 2005-11-11 14:45 Changes of surface structures during reactions of monomethylgermane on Si(001) -- Toward to fabrication of Ge embedded in SiC structure -- Masayuki Harashima, Tetsushi Kanemaru, Ariyuki Kato, Tomoaki Ogiwara, Kanji Yasui, Tadashi Akahane, Masasuke Takata (Nagaoka Univ. of Technol.) Link to ES Tech. Rep. Archives:  CPM2005-155 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Initial stage of surface reactions between monomethylgermane (MMGe: GeH$_3$CH$_3$) and Si(001) surfaces has been analyzed using reflective high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). The reactions were similar to those using monomethylsilane (MMS: SiH$_3$CH$_3$), that is, c(4$\times$4) structure which may be caused by incorporation of carbon atoms into the Si substrate appeared after a supply of molecules, followed by SiC islands formation as the c(4$\times$4) disappeared. At the same time, Ge related spots were observed near SiC twin spots on the RHEED pattern. XPS revealed that Ge existed in the form of Ge or SiGe on the surface layer without forming carbon clusters. Weak photoluminescence (PL) peaks around 0.85eV and 0.95eV, which are considered to originate from Ge nanodots, were observed. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Surface reaction / Si(001) / c(4x4) / SiC / Ge / nano-structure / / | |
| Reference Info. | IEICE Tech. Rep., vol. 105, no. 393, CPM2005-155, pp. 19-24, Nov. 2005. | |
| Paper # | CPM2005-155 | |
| Date of Issue | 2005-11-04 (CPM) | |
| ISSN | Print edition: ISSN 0913-5685 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | Link to ES Tech. Rep. Archives: CPM2005-155 |
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| Conference Information | |
| Committee | CPM |
| Conference Date | 2005-11-11 - 2005-11-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2005-11-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Changes of surface structures during reactions of monomethylgermane on Si(001) |
| Sub Title (in English) | Toward to fabrication of Ge embedded in SiC structure |
| Keyword(1) | Surface reaction |
| Keyword(2) | Si(001) |
| Keyword(3) | c(4x4) |
| Keyword(4) | SiC |
| Keyword(5) | Ge |
| Keyword(6) | nano-structure |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Masayuki Harashima |
| 1st Author's Affiliation | Nagaoka University of Technology (Nagaoka Univ. of Technol.) |
| 2nd Author's Name | Tetsushi Kanemaru |
| 2nd Author's Affiliation | Nagaoka University of Technology (Nagaoka Univ. of Technol.) |
| 3rd Author's Name | Ariyuki Kato |
| 3rd Author's Affiliation | Nagaoka University of Technology (Nagaoka Univ. of Technol.) |
| 4th Author's Name | Tomoaki Ogiwara |
| 4th Author's Affiliation | Nagaoka University of Technology (Nagaoka Univ. of Technol.) |
| 5th Author's Name | Kanji Yasui |
| 5th Author's Affiliation | Nagaoka University of Technology (Nagaoka Univ. of Technol.) |
| 6th Author's Name | Tadashi Akahane |
| 6th Author's Affiliation | Nagaoka University of Technology (Nagaoka Univ. of Technol.) |
| 7th Author's Name | Masasuke Takata |
| 7th Author's Affiliation | Nagaoka Uoniversity f Technology (Nagaoka Univ. of Technol.) |
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| Speaker | Author-1 |
| Date Time | 2005-11-11 14:45:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | CPM2005-155 |
| Volume (vol) | vol.105 |
| Number (no) | no.393 |
| Page | pp.19-24 |
| #Pages | 6 |
| Date of Issue | 2005-11-04 (CPM) |
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