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Paper Abstract and Keywords
Presentation 2006-02-17 16:05
Uncooled AlGaInAs-MQW-FP-LD with Ruthenium doped semi-insulating InP buried hetero-structure
Kiyotaka Tsuruoka, Ryuji Kobayashi, Koichi Naniwae, Keiichi Tokutome, , Tomoaki Kato (NEC) Link to ES Tech. Rep. Archives: OPE2005-153
Abstract (in Japanese) (See Japanese page) 
(in English) We have developed the first 1.3-μm AlGaInAs-MQW-FP-LD with ruthenium (Ru) doped InP buried heterostructure by narrow-stripe selective MOVPE. The device showed practical L-I characteristics comparable to a conventional uncooled LD buried with the Fe-doped InP and operated up to 170 °C. 10-Gb/s operation up to 120 °C and more than 3,500-hour reliability under 85-°C APC test has been successfully achieved.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaInAs / ruthenium / buried heterostructure / narrow-stripe selective MOVPE / Fabry-Perot LD / direct modulation / uncooled operation /  
Reference Info. IEICE Tech. Rep., vol. 105, no. 606, OPE2005-153, pp. 41-46, Feb. 2006.
Paper # OPE2005-153 
Date of Issue 2006-02-10 (OPE) 
ISSN Print edition: ISSN 0913-5685
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Conference Information
Committee OPE  
Conference Date 2006-02-17 - 2006-02-17 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To OPE 
Conference Code 2006-02-OPE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Uncooled AlGaInAs-MQW-FP-LD with Ruthenium doped semi-insulating InP buried hetero-structure 
Sub Title (in English)  
Keyword(1) AlGaInAs  
Keyword(2) ruthenium  
Keyword(3) buried heterostructure  
Keyword(4) narrow-stripe selective MOVPE  
Keyword(5) Fabry-Perot LD  
Keyword(6) direct modulation  
Keyword(7) uncooled operation  
Keyword(8)  
1st Author's Name Kiyotaka Tsuruoka  
1st Author's Affiliation NEC Corporation (NEC)
2nd Author's Name Ryuji Kobayashi  
2nd Author's Affiliation NEC Corporation (NEC)
3rd Author's Name Koichi Naniwae  
3rd Author's Affiliation NEC Corporation (NEC)
4th Author's Name Keiichi Tokutome  
4th Author's Affiliation NEC Corporation (NEC)
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5th Author's Affiliation NEC Corporation (NEC)
6th Author's Name Tomoaki Kato  
6th Author's Affiliation NEC Corporation (NEC)
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Speaker Author-1 
Date Time 2006-02-17 16:05:00 
Presentation Time 25 minutes 
Registration for OPE 
Paper # OPE2005-153 
Volume (vol) vol.105 
Number (no) no.606 
Page pp.41-46 
#Pages
Date of Issue 2006-02-10 (OPE) 


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