Paper Abstract and Keywords |
Presentation |
2006-02-17 16:05
Uncooled AlGaInAs-MQW-FP-LD with Ruthenium doped semi-insulating InP buried hetero-structure Kiyotaka Tsuruoka, Ryuji Kobayashi, Koichi Naniwae, Keiichi Tokutome, , Tomoaki Kato (NEC) Link to ES Tech. Rep. Archives: OPE2005-153 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have developed the first 1.3-μm AlGaInAs-MQW-FP-LD with ruthenium (Ru) doped InP buried heterostructure by narrow-stripe selective MOVPE. The device showed practical L-I characteristics comparable to a conventional uncooled LD buried with the Fe-doped InP and operated up to 170 °C. 10-Gb/s operation up to 120 °C and more than 3,500-hour reliability under 85-°C APC test has been successfully achieved. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlGaInAs / ruthenium / buried heterostructure / narrow-stripe selective MOVPE / Fabry-Perot LD / direct modulation / uncooled operation / |
Reference Info. |
IEICE Tech. Rep., vol. 105, no. 606, OPE2005-153, pp. 41-46, Feb. 2006. |
Paper # |
OPE2005-153 |
Date of Issue |
2006-02-10 (OPE) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
Link to ES Tech. Rep. Archives: OPE2005-153 |
Conference Information |
Committee |
OPE |
Conference Date |
2006-02-17 - 2006-02-17 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
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Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
OPE |
Conference Code |
2006-02-OPE |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Uncooled AlGaInAs-MQW-FP-LD with Ruthenium doped semi-insulating InP buried hetero-structure |
Sub Title (in English) |
|
Keyword(1) |
AlGaInAs |
Keyword(2) |
ruthenium |
Keyword(3) |
buried heterostructure |
Keyword(4) |
narrow-stripe selective MOVPE |
Keyword(5) |
Fabry-Perot LD |
Keyword(6) |
direct modulation |
Keyword(7) |
uncooled operation |
Keyword(8) |
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1st Author's Name |
Kiyotaka Tsuruoka |
1st Author's Affiliation |
NEC Corporation (NEC) |
2nd Author's Name |
Ryuji Kobayashi |
2nd Author's Affiliation |
NEC Corporation (NEC) |
3rd Author's Name |
Koichi Naniwae |
3rd Author's Affiliation |
NEC Corporation (NEC) |
4th Author's Name |
Keiichi Tokutome |
4th Author's Affiliation |
NEC Corporation (NEC) |
5th Author's Name |
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5th Author's Affiliation |
NEC Corporation (NEC) |
6th Author's Name |
Tomoaki Kato |
6th Author's Affiliation |
NEC Corporation (NEC) |
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Speaker |
Author-1 |
Date Time |
2006-02-17 16:05:00 |
Presentation Time |
25 minutes |
Registration for |
OPE |
Paper # |
OPE2005-153 |
Volume (vol) |
vol.105 |
Number (no) |
no.606 |
Page |
pp.41-46 |
#Pages |
6 |
Date of Issue |
2006-02-10 (OPE) |