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Paper Abstract and Keywords
Presentation 2006-04-13 11:35
Technology development of 128Mb-FBC(Floating Body Cell) Memory by 90nm node CMOS process
Hiroomi Nakajima, Yoshihiro Minami, Tomoaki Shino (SoC Center, Toshiba), Atsushi Sakamoto (TJ), Tomoki Higashi (TOSMEC), Naoki Kusunoki, Katsuyuki Fujita, Kosuke Hatsuda, Takashi Ohsawa, Nobutoshi Aoki, Hiroyoshi Tanimoto, Mutsuo Morikado, Kazumi Inoh, Takeshi Hamamoto, Akihiro Nitayama (SoC Center, Toshiba) Link to ES Tech. Rep. Archives: ICD2006-5
Abstract (in Japanese) (See Japanese page) 
(in English) A 128Mb SOI DRAM with FBC (Floating Body Cell) has been successfully developed for the first time. In order to realize full functionality and good retention characteristics, the well design has been optimized. Cu wiring has been used for Bit Line(BL) and Source Line(SL), which leads to increasing the signal of the worst bit in the array and also realizes the full compatibility with 90nm CMOS Technology.
Keyword (in Japanese) (See Japanese page) 
(in English) FBC / SOI / DRAM / Cu / Memory / Embeded / 90nm / CMOS  
Reference Info. IEICE Tech. Rep., vol. 106, no. 2, ICD2006-5, pp. 25-30, April 2006.
Paper # ICD2006-5 
Date of Issue 2006-04-06 (ICD) 
ISSN Print edition: ISSN 0913-5685
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Conference Information
Committee ICD  
Conference Date 2006-04-13 - 2006-04-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Oita University 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2006-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Technology development of 128Mb-FBC(Floating Body Cell) Memory by 90nm node CMOS process 
Sub Title (in English)  
Keyword(1) FBC  
Keyword(2) SOI  
Keyword(3) DRAM  
Keyword(4) Cu  
Keyword(5) Memory  
Keyword(6) Embeded  
Keyword(7) 90nm  
Keyword(8) CMOS  
1st Author's Name Hiroomi Nakajima  
1st Author's Affiliation SoC Research and Development Center, Toshiba Corp. (SoC Center, Toshiba)
2nd Author's Name Yoshihiro Minami  
2nd Author's Affiliation SoC Research and Development Center, Toshiba Corp. (SoC Center, Toshiba)
3rd Author's Name Tomoaki Shino  
3rd Author's Affiliation SoC Research and Development Center, Toshiba Corp. (SoC Center, Toshiba)
4th Author's Name Atsushi Sakamoto  
4th Author's Affiliation Toshiba Information Systems(Japan) Corp. (TJ)
5th Author's Name Tomoki Higashi  
5th Author's Affiliation Toshiba Microelectronics Corp. (TOSMEC)
6th Author's Name Naoki Kusunoki  
6th Author's Affiliation SoC Research and Development Center, Toshiba Corp. (SoC Center, Toshiba)
7th Author's Name Katsuyuki Fujita  
7th Author's Affiliation SoC Research and Development Center, Toshiba Corp. (SoC Center, Toshiba)
8th Author's Name Kosuke Hatsuda  
8th Author's Affiliation SoC Research and Development Center, Toshiba Corp. (SoC Center, Toshiba)
9th Author's Name Takashi Ohsawa  
9th Author's Affiliation SoC Research and Development Center, Toshiba Corp. (SoC Center, Toshiba)
10th Author's Name Nobutoshi Aoki  
10th Author's Affiliation SoC Research and Development Center, Toshiba Corp. (SoC Center, Toshiba)
11th Author's Name Hiroyoshi Tanimoto  
11th Author's Affiliation SoC Research and Development Center, Toshiba Corp. (SoC Center, Toshiba)
12th Author's Name Mutsuo Morikado  
12th Author's Affiliation SoC Research and Development Center, Toshiba Corp. (SoC Center, Toshiba)
13th Author's Name Kazumi Inoh  
13th Author's Affiliation SoC Research and Development Center, Toshiba Corp. (SoC Center, Toshiba)
14th Author's Name Takeshi Hamamoto  
14th Author's Affiliation SoC Research and Development Center, Toshiba Corp. (SoC Center, Toshiba)
15th Author's Name Akihiro Nitayama  
15th Author's Affiliation SoC Research and Development Center, Toshiba Corp. (SoC Center, Toshiba)
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Speaker Author-1 
Date Time 2006-04-13 11:35:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # ICD2006-5 
Volume (vol) vol.106 
Number (no) no.2 
Page pp.25-30 
#Pages
Date of Issue 2006-04-06 (ICD) 


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