IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2006-06-21 13:25
Photoelectron Spectroscopy of HfO2/Ge(100) stacked structure
Hiroshi Nakagawa, Akio Ohta, Hiroyuki Abe, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) Link to ES Tech. Rep. Archives: SDM2006-43
Abstract (in Japanese) (See Japanese page) 
(in English) Ultrathin hafnium oxides (~5.4nm in thickness) evaporated on wet-chemically cleaned Ge(100) were annealed at 550ºC in ultra high vacuum (UHV), and the chemical bonding feature and the energy band alignment between HfO2 and Ge(100) were evaluated by X-ray photoelectron spectroscopy. It is found that Ge atoms are diffused and incorporated into the HfO2 films by ~18at.% during the HfO2 evaporation. In the UHV annealing, the Ge content was increased up to 30at.% in the films and 10at.% in 1nm-underlaying layer although no Ge atom was detected at the top surface. From the analysis of O1s energy loss spectra, the energy band gap of ultrathin hafnium oxides in the thickness range of 2.15.4nm were determined to be 6.150.05eV and remain unchanged by UHV-annealing at 550ºC. The valence band offset between hafnium oxides and Ge(100) was evaluated to be 3.350.05eV from the analysis of the valence band spectra for HfO2/Ge(100) structure.
Keyword (in Japanese) (See Japanese page) 
(in English) Ge(100) Substrates / Hafnium Oxide / X-ray Photoelectron Spectroscopy / / / / /  
Reference Info. IEICE Tech. Rep., vol. 106, no. 108, SDM2006-43, pp. 7-12, June 2006.
Paper # SDM2006-43 
Date of Issue 2006-06-14 (SDM) 
ISSN Print edition: ISSN 0913-5685
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF Link to ES Tech. Rep. Archives: SDM2006-43

Conference Information
Committee SDM  
Conference Date 2006-06-21 - 2006-06-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Faculty Club, Hiroshima Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technologies of Dielectric Thin Films for Future Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2006-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Photoelectron Spectroscopy of HfO2/Ge(100) stacked structure 
Sub Title (in English)  
Keyword(1) Ge(100) Substrates  
Keyword(2) Hafnium Oxide  
Keyword(3) X-ray Photoelectron Spectroscopy  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hiroshi Nakagawa  
1st Author's Affiliation Hiroshima University (Hiroshima Univ.)
2nd Author's Name Akio Ohta  
2nd Author's Affiliation Hiroshima University (Hiroshima Univ.)
3rd Author's Name Hiroyuki Abe  
3rd Author's Affiliation Hiroshima University (Hiroshima Univ.)
4th Author's Name Hideki Murakami  
4th Author's Affiliation Hiroshima University (Hiroshima Univ.)
5th Author's Name Seiichiro Higashi  
5th Author's Affiliation Hiroshima University (Hiroshima Univ.)
6th Author's Name Seiichi Miyazaki  
6th Author's Affiliation Hiroshima University (Hiroshima Univ.)
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2006-06-21 13:25:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2006-43 
Volume (vol) vol.106 
Number (no) no.108 
Page pp.7-12 
#Pages
Date of Issue 2006-06-14 (SDM) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan