Paper Abstract and Keywords |
Presentation |
2006-06-21 13:25
Photoelectron Spectroscopy of HfO2/Ge(100) stacked structure Hiroshi Nakagawa, Akio Ohta, Hiroyuki Abe, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki (Hiroshima Univ.) Link to ES Tech. Rep. Archives: SDM2006-43 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Ultrathin hafnium oxides (~5.4nm in thickness) evaporated on wet-chemically cleaned Ge(100) were annealed at 550ºC in ultra high vacuum (UHV), and the chemical bonding feature and the energy band alignment between HfO2 and Ge(100) were evaluated by X-ray photoelectron spectroscopy. It is found that Ge atoms are diffused and incorporated into the HfO2 films by ~18at.% during the HfO2 evaporation. In the UHV annealing, the Ge content was increased up to 30at.% in the films and 10at.% in 1nm-underlaying layer although no Ge atom was detected at the top surface. From the analysis of O1s energy loss spectra, the energy band gap of ultrathin hafnium oxides in the thickness range of 2.15.4nm were determined to be 6.150.05eV and remain unchanged by UHV-annealing at 550ºC. The valence band offset between hafnium oxides and Ge(100) was evaluated to be 3.350.05eV from the analysis of the valence band spectra for HfO2/Ge(100) structure. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Ge(100) Substrates / Hafnium Oxide / X-ray Photoelectron Spectroscopy / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 106, no. 108, SDM2006-43, pp. 7-12, June 2006. |
Paper # |
SDM2006-43 |
Date of Issue |
2006-06-14 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
Link to ES Tech. Rep. Archives: SDM2006-43 |
Conference Information |
Committee |
SDM |
Conference Date |
2006-06-21 - 2006-06-22 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Faculty Club, Hiroshima Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Science and Technologies of Dielectric Thin Films for Future Electron Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2006-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Photoelectron Spectroscopy of HfO2/Ge(100) stacked structure |
Sub Title (in English) |
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Keyword(1) |
Ge(100) Substrates |
Keyword(2) |
Hafnium Oxide |
Keyword(3) |
X-ray Photoelectron Spectroscopy |
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1st Author's Name |
Hiroshi Nakagawa |
1st Author's Affiliation |
Hiroshima University (Hiroshima Univ.) |
2nd Author's Name |
Akio Ohta |
2nd Author's Affiliation |
Hiroshima University (Hiroshima Univ.) |
3rd Author's Name |
Hiroyuki Abe |
3rd Author's Affiliation |
Hiroshima University (Hiroshima Univ.) |
4th Author's Name |
Hideki Murakami |
4th Author's Affiliation |
Hiroshima University (Hiroshima Univ.) |
5th Author's Name |
Seiichiro Higashi |
5th Author's Affiliation |
Hiroshima University (Hiroshima Univ.) |
6th Author's Name |
Seiichi Miyazaki |
6th Author's Affiliation |
Hiroshima University (Hiroshima Univ.) |
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Speaker |
Author-1 |
Date Time |
2006-06-21 13:25:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2006-43 |
Volume (vol) |
vol.106 |
Number (no) |
no.108 |
Page |
pp.7-12 |
#Pages |
6 |
Date of Issue |
2006-06-14 (SDM) |
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