Paper Abstract and Keywords |
Presentation |
2006-06-22 13:10
Interfacial reaction in HfO2/SiO2/Si(001) during O2 anneal observed by high-resolution RBS Zhao Ming, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura (Kyoto Univ.), Masashi Uematsu (NTT BRL), Kazuyoshi Torii, Satoshi Kamiyama, Yasuo Nara (Selete), Keisaku Yamada (Waseda Univ.) Link to ES Tech. Rep. Archives: SDM2006-59 |
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Reference Info. |
IEICE Tech. Rep., vol. 106, no. 108, SDM2006-59, pp. 99-102, June 2006. |
Paper # |
SDM2006-59 |
Date of Issue |
2006-06-14 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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