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Paper Abstract and Keywords
Presentation 2007-05-24 14:50
Analysis of plasma etching damages and characterization of annealing effects on GaN by excess carrier lifetime measurements
Keisuke Fukushima, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs., Inc.)
Abstract (in Japanese) (See Japanese page) 
(in English) Gallium nitride (GaN) is promising for high power and high frequency devices, and the etching processes is necessary in bipolar device fabrication. Inductively coupled plasma (ICP) etching is one of the plasma etching techniques which also forms a damage layer on the sample surface. In this work, we have measured the excess carrier lifetime in ICP etched GaN with the microwave photoconductivity decay (μ-PCD) method. We analyzed deep levels introduced by ICP etching by measuring temperature dependence of the decay curves. We annealed ICP etched GaN, and discussed effects of annealing on the etching damage by observing the change of the excess carrier lifetime.
Keyword (in Japanese) (See Japanese page) 
(in English) Gallium nitride / carrier lifetime / μ-PCD method / ICP / decay curve / temperature dependence / annealing /  
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Conference Information
Committee SDM ED CPM  
Conference Date 2007-05-24 - 2007-05-25 
Place (in Japanese) (See Japanese page) 
Place (in English) Shizuoka Univ. 
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Paper Information
Registration To ED 
Conference Code 2007-05-SDM-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Analysis of plasma etching damages and characterization of annealing effects on GaN by excess carrier lifetime measurements 
Sub Title (in English)  
Keyword(1) Gallium nitride  
Keyword(2) carrier lifetime  
Keyword(3) μ-PCD method  
Keyword(4) ICP  
Keyword(5) decay curve  
Keyword(6) temperature dependence  
Keyword(7) annealing  
Keyword(8)  
1st Author's Name Keisuke Fukushima  
1st Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
2nd Author's Name Masashi Kato  
2nd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
3rd Author's Name Masaya Ichimura  
3rd Author's Affiliation Nagoya Institute of Technology (Nagoya Inst. of Tech.)
4th Author's Name Masakazu Kanechika  
4th Author's Affiliation Toyota Central R&D Labs., Inc. (Toyota Central R&D Labs., Inc.)
5th Author's Name Osamu Ishiguro  
5th Author's Affiliation Toyota Central R&D Labs., Inc. (Toyota Central R&D Labs., Inc.)
6th Author's Name Tetsu Kachi  
6th Author's Affiliation Toyota Central R&D Labs., Inc. (Toyota Central R&D Labs., Inc.)
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Speaker Author-1 
Date Time 2007-05-24 14:50:00 
Presentation Time 20 minutes 
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