| Paper Abstract and Keywords |
| Presentation |
2007-05-25 11:20
Characterization of plasma etching effects on GaN by electrical measurements of Schottky diodes
Masashi Kato, Kazuki Mikamo, Masaya Ichimura (Nagoya Inst. of Tech.), Masakazu Kanechika, Osamu Ishiguro, Tetsu Kachi (Toyota Central R&D Labs. Inc.) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
Gallium Nitride (GaN) is a promising semiconductor material for high-power devices. For realization of the high-power devices, formation of p-type layer and plasma etching process are essential. In this work, we characterize plasma etching effects to p-type GaN using Schottky diodes. We employed current-voltage, capacitance-voltage, deep level transient spectroscopy and photocapacitance measurements. As a result, we observed a deep level located at Ec-0.25 eV in both n-type and p-type GaN. It is considered that this level corresponds to a deep level introduced by nitrogen vacancy and low-power plasma etching is effective to reduce introduction of this level. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
GaN / plasma etching / Schottky diode / DLTS / photocapacitance / / / |
| Reference Info. |
IEICE Tech. Rep. |
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