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Paper Abstract and Keywords
Presentation 2007-05-25 10:40
ZnO thin layer growen by sideflow RPE-MOCVD
Masahiko Adachi, Tuyoshi Aoshima, Atsushi Nakamura, Jiro Temmyo (Shizuoka Univ.)
Abstract (in Japanese) (See Japanese page) 
(in English) ZnO layers growth on a-plane sapphire(11-20)substrates by sideflow remote plasma enhanced MOCVD (RPE-MOCVD)was studied. The relation between thickness distribution and growth mode was noticed. We successfully controlled growth from thin layers to nanostructures, by varying growth temperature, pressure and ?/? ratio. The growth temperature dependency of an optical property of the ZnO thin layers was characterized by photoluminescence measurement.
Keyword (in Japanese) (See Japanese page) 
(in English) sideflow reaction chamber / remote plasma enhanced MOCVD / nanorods / nanowires / / / /  
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Conference Information
Committee SDM ED CPM  
Conference Date 2007-05-24 - 2007-05-25 
Place (in Japanese) (See Japanese page) 
Place (in English) Shizuoka Univ. 
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Paper Information
Registration To ED 
Conference Code 2007-05-SDM-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) ZnO thin layer growen by sideflow RPE-MOCVD 
Sub Title (in English)  
Keyword(1) sideflow reaction chamber  
Keyword(2) remote plasma enhanced MOCVD  
Keyword(3) nanorods  
Keyword(4) nanowires  
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1st Author's Name Masahiko Adachi  
1st Author's Affiliation Shizuoka University (Shizuoka Univ.)
2nd Author's Name Tuyoshi Aoshima  
2nd Author's Affiliation Shizuoka University (Shizuoka Univ.)
3rd Author's Name Atsushi Nakamura  
3rd Author's Affiliation Shizuoka University (Shizuoka Univ.)
4th Author's Name Jiro Temmyo  
4th Author's Affiliation Shizuoka University (Shizuoka Univ.)
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Speaker Author-1 
Date Time 2007-05-25 10:40:00 
Presentation Time 20 minutes 
Registration for ED 
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