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| Presentation | 2007-06-08 14:40 Formation and characterization of Ge$_3$N$_4$ thin layers Katsuhiro Kutsuki, Gaku Okamoto, Takuji Hosoi, Takayoshi Shimura, Kiyoshi Yasutake, Heiji Watanabe (Osaka Univ.)  SDM2007-49 Link to ES Tech. Rep. Archives: SDM2007-49 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have investigated the nitridation of germanium substrate by our original high-density plasma source. Pure amorphous Ge$_3$N$_4$ layers without oxygen are obtained by the direct nitridation of clean Ge substrates. The conformal growth with smooth surface and sharp interface can be achieved in the Ge$_3$N$_4$ layers grown at 350 $^o$C, where the thickness of the Ge$_3$N$_4$ layers is 3.5 nm. In addition, in order to apply this Ge nitride to integrate high-k gate dielectrics with Ge and its alloy for FET-based devices, we have also investigated the thermal stability of the Ge nitride layers. As a result, we found that Ge$_3$N$_4$ layers resisted in N2 ambient around 550 $^o$C, and evaporated above 600 $^o$C. These results demonstrate that it is promising as a passivation layer for integrating high-k dielectric on high performance Ge substrate and is expected to shed light on the realization of Ge-based FETs. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Ge$_3$N$_4$ / Plasma Nitridation / Thermal Stability / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 85, SDM2007-49, pp. 97-100, June 2007. | |
| Paper # | SDM2007-49 | |
| Date of Issue | 2007-05-31 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2007-49 Link to ES Tech. Rep. Archives: SDM2007-49 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2007-06-07 - 2007-06-08 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Hiroshima Univ. ( Faculty Club) |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Sci. & Technol. for Thin Dielectrics for MIS Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2007-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation and characterization of Ge$_3$N$_4$ thin layers |
| Sub Title (in English) | |
| Keyword(1) | Ge$_3$N$_4$ |
| Keyword(2) | Plasma Nitridation |
| Keyword(3) | Thermal Stability |
| Keyword(4) | |
| Keyword(5) | |
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| Keyword(8) | |
| 1st Author's Name | Katsuhiro Kutsuki |
| 1st Author's Affiliation | Osaka University (Osaka Univ.) |
| 2nd Author's Name | Gaku Okamoto |
| 2nd Author's Affiliation | Osaka University (Osaka Univ.) |
| 3rd Author's Name | Takuji Hosoi |
| 3rd Author's Affiliation | Osaka University (Osaka Univ.) |
| 4th Author's Name | Takayoshi Shimura |
| 4th Author's Affiliation | Osaka University (Osaka Univ.) |
| 5th Author's Name | Kiyoshi Yasutake |
| 5th Author's Affiliation | Osaka University (Osaka Univ.) |
| 6th Author's Name | Heiji Watanabe |
| 6th Author's Affiliation | Osaka University (Osaka Univ.) |
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| Speaker | Author-1 |
| Date Time | 2007-06-08 14:40:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2007-49 |
| Volume (vol) | vol.107 |
| Number (no) | no.85 |
| Page | pp.97-100 |
| #Pages | 4 |
| Date of Issue | 2007-05-31 (SDM) |
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