Paper Abstract and Keywords |
Presentation |
2007-06-16 12:00
Reverse characteristics of 4H-SiC PiN diode with Vanadium ion implanted guard-ring Shuichi Ono, Manabu Arai (NJRC) ED2007-46 Link to ES Tech. Rep. Archives: ED2007-46 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We fabricated the 4H-SiC PiN diodes with mesa structure, and Vanadium ion implanted guard-ring. The reverse characteristics and light emission of the PiN diodes were evaluated under the avalanche breakdown condition. The 4H-SiC PiN diodes with guard-ring showed the uniform avalanche breakdown characteristics, and showed the good RF characteristics for IMPATT diode. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
4H-SiC / PiN diode / avalanche breakdown / vanadium / guard-ring / IMPATT diode / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 95, ED2007-46, pp. 79-83, June 2007. |
Paper # |
ED2007-46 |
Date of Issue |
2007-06-08 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2007-46 Link to ES Tech. Rep. Archives: ED2007-46 |
Conference Information |
Committee |
ED |
Conference Date |
2007-06-15 - 2007-06-16 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Toyama Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Compound Semiconductor Process, Device, etc |
Paper Information |
Registration To |
ED |
Conference Code |
2007-06-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Reverse characteristics of 4H-SiC PiN diode with Vanadium ion implanted guard-ring |
Sub Title (in English) |
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Keyword(1) |
4H-SiC |
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PiN diode |
Keyword(3) |
avalanche breakdown |
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vanadium |
Keyword(5) |
guard-ring |
Keyword(6) |
IMPATT diode |
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1st Author's Name |
Shuichi Ono |
1st Author's Affiliation |
New Japan Radio Co.,Ltd. (NJRC) |
2nd Author's Name |
Manabu Arai |
2nd Author's Affiliation |
New Japan Radio Co.,Ltd. (NJRC) |
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Speaker |
Author-1 |
Date Time |
2007-06-16 12:00:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2007-46 |
Volume (vol) |
vol.107 |
Number (no) |
no.95 |
Page |
pp.79-83 |
#Pages |
5 |
Date of Issue |
2007-06-08 (ED) |
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