Paper Abstract and Keywords |
Presentation |
2007-10-11 13:05
Polarization Properties in III-nitride Quantum Wells with Various Substrate Orientations Atsushi Yamaguchi (Kanazawa Inst. of Technology) ED2007-156 CPM2007-82 LQE2007-57 Link to ES Tech. Rep. Archives: ED2007-156 CPM2007-82 LQE2007-57 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Polarization properties in III-nitride quantum wells with various substrate orientations have been investigated theoretically. It is found that in-plane optical anisotropy appears in non C-plane surfaces, and that its direction is determined by the competition of quantum confinement effect and strain effect. It is also shown that the optical anisotropy is very sensitive to in-plane strain anisotropy. Meanwhile, it is known that AlGaN films with high Al composition mainly emit the light polarized in the c-direction and this causes low emission efficiency in the c-face based devices. It is predicted, in this study, that this unfavorable polarization can be switched into favorable in-plane polarization by decreasing quantum well width and/or introducing in-plane compressive strain. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
optical anisotropy / GaN / AlGan / valence band / strain / calculation / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 253, LQE2007-57, pp. 1-6, Oct. 2007. |
Paper # |
LQE2007-57 |
Date of Issue |
2007-10-04 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2007-156 CPM2007-82 LQE2007-57 Link to ES Tech. Rep. Archives: ED2007-156 CPM2007-82 LQE2007-57 |
Conference Information |
Committee |
CPM ED LQE |
Conference Date |
2007-10-11 - 2007-10-12 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Fukui Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
Paper Information |
Registration To |
LQE |
Conference Code |
2007-10-CPM-ED-LQE |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Polarization Properties in III-nitride Quantum Wells with Various Substrate Orientations |
Sub Title (in English) |
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Keyword(1) |
optical anisotropy |
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GaN |
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AlGan |
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valence band |
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strain |
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calculation |
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1st Author's Name |
Atsushi Yamaguchi |
1st Author's Affiliation |
Kanazawa Institute of Technology (Kanazawa Inst. of Technology) |
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Speaker |
Author-1 |
Date Time |
2007-10-11 13:05:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
ED2007-156, CPM2007-82, LQE2007-57 |
Volume (vol) |
vol.107 |
Number (no) |
no.251(ED), no.252(CPM), no.253(LQE) |
Page |
pp.1-6 |
#Pages |
6 |
Date of Issue |
2007-10-04 (ED, CPM, LQE) |
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