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| Presentation | 2007-10-11 14:55 High efficiency Ultraviolet LEDs on Si Using InAlGaN Multi-Quantum-Wells with High Indium Contents Yasuyuki Fukushima, Yuji Takase, Manabu Usuda, Kenji Orita, Tetsuzo Ueda, Tsuyoshi Tanaka (M. E. I. Co., Ltd.)  ED2007-159 CPM2007-85 LQE2007-60 Link to ES Tech. Rep. Archives: ED2007-159 CPM2007-85 LQE2007-60 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Ultraviolet Light Emitting Diodes (UV-LEDs) are promising for various applications such as photocatalyst or excitation source for white LEDs. In this paper, we report on high-brightness UV-LEDs on Si substrate aiming at the low cost fabrication. InAlGaN quaternary alloy with high In content is used in the active layer in which localized excitons screen the effect of the non-radiative recombination center caused by the dislocations. The InAlGaN multi-quantum-well active layers exhibit very high internal quantum efficiency of 15% at around 350nm which is as comparable high as that on SiC for the UV-emission. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Ultraviolet Light Emitting Diodes / Si substrate / III-V Nitride / InAlGaN quaternary alloy / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 251, ED2007-159, pp. 19-23, Oct. 2007. | |
| Paper # | ED2007-159 | |
| Date of Issue | 2007-10-04 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2007-159 CPM2007-85 LQE2007-60 Link to ES Tech. Rep. Archives: ED2007-159 CPM2007-85 LQE2007-60 |
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| Conference Information | |
| Committee | CPM ED LQE |
| Conference Date | 2007-10-11 - 2007-10-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Fukui Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2007-10-CPM-ED-LQE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High efficiency Ultraviolet LEDs on Si Using InAlGaN Multi-Quantum-Wells with High Indium Contents |
| Sub Title (in English) | |
| Keyword(1) | Ultraviolet Light Emitting Diodes |
| Keyword(2) | Si substrate |
| Keyword(3) | III-V Nitride |
| Keyword(4) | InAlGaN quaternary alloy |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yasuyuki Fukushima |
| 1st Author's Affiliation | Matsushita Electric Industrial Co., Ltd. (M. E. I. Co., Ltd.) |
| 2nd Author's Name | Yuji Takase |
| 2nd Author's Affiliation | Matsushita Electric Industrial Co., Ltd. (M. E. I. Co., Ltd.) |
| 3rd Author's Name | Manabu Usuda |
| 3rd Author's Affiliation | Matsushita Electric Industrial Co., Ltd. (M. E. I. Co., Ltd.) |
| 4th Author's Name | Kenji Orita |
| 4th Author's Affiliation | Matsushita Electric Industrial Co., Ltd. (M. E. I. Co., Ltd.) |
| 5th Author's Name | Tetsuzo Ueda |
| 5th Author's Affiliation | Matsushita Electric Industrial Co., Ltd. (M. E. I. Co., Ltd.) |
| 6th Author's Name | Tsuyoshi Tanaka |
| 6th Author's Affiliation | Matsushita Electric Industrial Co., Ltd. (M. E. I. Co., Ltd.) |
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| Speaker | Author-1 |
| Date Time | 2007-10-11 14:55:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2007-159, CPM2007-85, LQE2007-60 |
| Volume (vol) | vol.107 |
| Number (no) | no.251(ED), no.252(CPM), no.253(LQE) |
| Page | pp.19-23 |
| #Pages | 5 |
| Date of Issue | 2007-10-04 (ED, CPM, LQE) |
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