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| Presentation | 2007-10-12 13:50 Electrical characterization of homoepitaxially-grown pn GaN diodes Yutaka Tokuda, Youichi Matsuoka, Takeshi Seo (Aichi Inst. Tech.), Hiroyuki Ueda, Osamu Ishiguro, Narumasa Soejima, Tetsu Kachi (Toyota Central R&D Labs. Inc.)  ED2007-173 CPM2007-99 LQE2007-74 Link to ES Tech. Rep. Archives: ED2007-173 CPM2007-99 LQE2007-74 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We report the electrical characterization of homoepitaxially-grown pn GaN by MOCVD on free-standing GaN substrates. The 10-μm n GaN (Si~2x1016 cm-3) was grown on n+ GaN, followed by the growth of the 1-μm p GaN (Mg~3x1019 cm-3) or followed by the growth of the 0.5-μm p GaN (Mg~5x1018 cm-3) and 0.1-μm p+ GaN (Mg~1x1020 cm-3). The mesa structures were fabricated by ICP etching. The wet etching after ICP improves the current-voltage characteristics. The admittance spectroscopy reveals the Mg-related peaks. DLTS measurements show two majority-carrier traps (0.26, 0.59 eV) and one minority-carrier trap (0.89 eV) with two unclear minority-carrier traps. The 0.89 eV minority-carrier trap is dominant with the trap concentration of 1.3x1015 cm-3. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / homoepitaxial growth / pn diodes / DLTS / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 253, LQE2007-74, pp. 85-88, Oct. 2007. | |
| Paper # | LQE2007-74 | |
| Date of Issue | 2007-10-04 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2007-173 CPM2007-99 LQE2007-74 Link to ES Tech. Rep. Archives: ED2007-173 CPM2007-99 LQE2007-74 |
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| Conference Information | |
| Committee | CPM ED LQE |
| Conference Date | 2007-10-11 - 2007-10-12 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Fukui Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2007-10-CPM-ED-LQE |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical characterization of homoepitaxially-grown pn GaN diodes |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | homoepitaxial growth |
| Keyword(3) | pn diodes |
| Keyword(4) | DLTS |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yutaka Tokuda |
| 1st Author's Affiliation | Aichi Institute of Technology (Aichi Inst. Tech.) |
| 2nd Author's Name | Youichi Matsuoka |
| 2nd Author's Affiliation | Aichi Institute of Technology (Aichi Inst. Tech.) |
| 3rd Author's Name | Takeshi Seo |
| 3rd Author's Affiliation | Aichi Institute of Technology (Aichi Inst. Tech.) |
| 4th Author's Name | Hiroyuki Ueda |
| 4th Author's Affiliation | Toyota Central Research & Development Laboratories Incorporation (Toyota Central R&D Labs. Inc.) |
| 5th Author's Name | Osamu Ishiguro |
| 5th Author's Affiliation | Toyota Central Research & Development Laboratories Incorporation (Toyota Central R&D Labs. Inc.) |
| 6th Author's Name | Narumasa Soejima |
| 6th Author's Affiliation | Toyota Central Research & Development Laboratories Incorporation (Toyota Central R&D Labs. Inc.) |
| 7th Author's Name | Tetsu Kachi |
| 7th Author's Affiliation | Toyota Central Research & Development Laboratories Incorporation (Toyota Central R&D Labs. Inc.) |
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| Speaker | Author-1 |
| Date Time | 2007-10-12 13:50:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2007-173, CPM2007-99, LQE2007-74 |
| Volume (vol) | vol.107 |
| Number (no) | no.251(ED), no.252(CPM), no.253(LQE) |
| Page | pp.85-88 |
| #Pages | 4 |
| Date of Issue | 2007-10-04 (ED, CPM, LQE) |
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