Paper Abstract and Keywords |
Presentation |
2007-10-12 11:15
Surface control of AlGaN/GaN strcutures Masafumi Tajima, Junji Kotani, Takahiro Tamura, Tamotsu Hashizume (Hokkaido Univ.) ED2007-170 CPM2007-96 LQE2007-71 Link to ES Tech. Rep. Archives: ED2007-170 CPM2007-96 LQE2007-71 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have investigated the change in DC characteristics of AlGaN/GaN HEMTs after the gate-and drain-bias stress at high temperatures. A pronounced reduction of drain current and a degradation of transfer characteristics were observed after an off-state stress at 220oC. To improve the operation stability of the HEMT device, we have developed a surface control process utilizing an ultrathin Al layer. The process was very effective in reducing gate leakage currents. The device with the surface control process showed no degradation in DC characteristics even after the off-state stress at 220oC. It is likely that the surface process effectively suppress a trap- and/or defect-assisted multiplication of defect levels near AlGaN surface during the BT stress. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / AlGaN / HEMT / surface control / stability / reliability / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 251, ED2007-170, pp. 73-76, Oct. 2007. |
Paper # |
ED2007-170 |
Date of Issue |
2007-10-04 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2007-170 CPM2007-96 LQE2007-71 Link to ES Tech. Rep. Archives: ED2007-170 CPM2007-96 LQE2007-71 |
Conference Information |
Committee |
CPM ED LQE |
Conference Date |
2007-10-11 - 2007-10-12 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Fukui Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
Paper Information |
Registration To |
ED |
Conference Code |
2007-10-CPM-ED-LQE |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Surface control of AlGaN/GaN strcutures |
Sub Title (in English) |
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Keyword(1) |
GaN |
Keyword(2) |
AlGaN |
Keyword(3) |
HEMT |
Keyword(4) |
surface control |
Keyword(5) |
stability |
Keyword(6) |
reliability |
Keyword(7) |
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Keyword(8) |
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1st Author's Name |
Masafumi Tajima |
1st Author's Affiliation |
Hokkaido Universiy (Hokkaido Univ.) |
2nd Author's Name |
Junji Kotani |
2nd Author's Affiliation |
Hokkaido Universiy (Hokkaido Univ.) |
3rd Author's Name |
Takahiro Tamura |
3rd Author's Affiliation |
Hokkaido Universiy (Hokkaido Univ.) |
4th Author's Name |
Tamotsu Hashizume |
4th Author's Affiliation |
Hokkaido Universiy (Hokkaido Univ.) |
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Speaker |
Author-1 |
Date Time |
2007-10-12 11:15:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2007-170, CPM2007-96, LQE2007-71 |
Volume (vol) |
vol.107 |
Number (no) |
no.251(ED), no.252(CPM), no.253(LQE) |
Page |
pp.73-76 |
#Pages |
4 |
Date of Issue |
2007-10-04 (ED, CPM, LQE) |
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