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Paper Abstract and Keywords
Presentation 2007-10-12 11:15
Surface control of AlGaN/GaN strcutures
Masafumi Tajima, Junji Kotani, Takahiro Tamura, Tamotsu Hashizume (Hokkaido Univ.) ED2007-170 CPM2007-96 LQE2007-71 Link to ES Tech. Rep. Archives: ED2007-170 CPM2007-96 LQE2007-71
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated the change in DC characteristics of AlGaN/GaN HEMTs after the gate-and drain-bias stress at high temperatures. A pronounced reduction of drain current and a degradation of transfer characteristics were observed after an off-state stress at 220oC. To improve the operation stability of the HEMT device, we have developed a surface control process utilizing an ultrathin Al layer. The process was very effective in reducing gate leakage currents. The device with the surface control process showed no degradation in DC characteristics even after the off-state stress at 220oC. It is likely that the surface process effectively suppress a trap- and/or defect-assisted multiplication of defect levels near AlGaN surface during the BT stress.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / AlGaN / HEMT / surface control / stability / reliability / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 251, ED2007-170, pp. 73-76, Oct. 2007.
Paper # ED2007-170 
Date of Issue 2007-10-04 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-170 CPM2007-96 LQE2007-71 Link to ES Tech. Rep. Archives: ED2007-170 CPM2007-96 LQE2007-71

Conference Information
Committee CPM ED LQE  
Conference Date 2007-10-11 - 2007-10-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Fukui Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Paper Information
Registration To ED 
Conference Code 2007-10-CPM-ED-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Surface control of AlGaN/GaN strcutures 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) AlGaN  
Keyword(3) HEMT  
Keyword(4) surface control  
Keyword(5) stability  
Keyword(6) reliability  
Keyword(7)  
Keyword(8)  
1st Author's Name Masafumi Tajima  
1st Author's Affiliation Hokkaido Universiy (Hokkaido Univ.)
2nd Author's Name Junji Kotani  
2nd Author's Affiliation Hokkaido Universiy (Hokkaido Univ.)
3rd Author's Name Takahiro Tamura  
3rd Author's Affiliation Hokkaido Universiy (Hokkaido Univ.)
4th Author's Name Tamotsu Hashizume  
4th Author's Affiliation Hokkaido Universiy (Hokkaido Univ.)
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Speaker Author-1 
Date Time 2007-10-12 11:15:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-170, CPM2007-96, LQE2007-71 
Volume (vol) vol.107 
Number (no) no.251(ED), no.252(CPM), no.253(LQE) 
Page pp.73-76 
#Pages
Date of Issue 2007-10-04 (ED, CPM, LQE) 


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