Paper Abstract and Keywords |
Presentation |
2007-10-30 15:25
Analysis of strain-dependent hole transport characteristics in bulk Ge-pMOSFETs Hiroshi Takeda (NEC), Takeo Ikezawa, Michihito Kawada (NIS), Masami Hane (NEC) VLD2007-58 SDM2007-202 Link to ES Tech. Rep. Archives: SDM2007-202 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Self-consistent full-band Monte Carlo (with multi-subbands) device simulations were performed to clarify the mechanism of drain-current enhancements for uniaxially strained bulk Ge-pMOSFETs with different channel/surface orientations. Unlike any conventional mobility studies, our device simulation enables us to probe fundamental
roles of source-injection and channel backscattering in the practical bulk-MOSFET device structures with optimized channel/surface selections. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Strain / Stress / Ge-device / TCAD / Monte Carlo Simulation / Full-band / Quantization / MOSFET |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 297, SDM2007-202, pp. 37-41, Oct. 2007. |
Paper # |
SDM2007-202 |
Date of Issue |
2007-10-23 (VLD, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
VLD2007-58 SDM2007-202 Link to ES Tech. Rep. Archives: SDM2007-202 |
Conference Information |
Committee |
SDM VLD |
Conference Date |
2007-10-30 - 2007-10-31 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process, Device, Circuit Simulation, etc. |
Paper Information |
Registration To |
SDM |
Conference Code |
2007-10-SDM-VLD |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Analysis of strain-dependent hole transport characteristics in bulk Ge-pMOSFETs |
Sub Title (in English) |
|
Keyword(1) |
Strain |
Keyword(2) |
Stress |
Keyword(3) |
Ge-device |
Keyword(4) |
TCAD |
Keyword(5) |
Monte Carlo Simulation |
Keyword(6) |
Full-band |
Keyword(7) |
Quantization |
Keyword(8) |
MOSFET |
1st Author's Name |
Hiroshi Takeda |
1st Author's Affiliation |
NEC (NEC) |
2nd Author's Name |
Takeo Ikezawa |
2nd Author's Affiliation |
NEC Informatec Systems (NIS) |
3rd Author's Name |
Michihito Kawada |
3rd Author's Affiliation |
NEC Informatec Systems (NIS) |
4th Author's Name |
Masami Hane |
4th Author's Affiliation |
NEC (NEC) |
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Speaker |
Author-1 |
Date Time |
2007-10-30 15:25:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
VLD2007-58, SDM2007-202 |
Volume (vol) |
vol.107 |
Number (no) |
no.295(VLD), no.297(SDM) |
Page |
pp.37-41 |
#Pages |
5 |
Date of Issue |
2007-10-23 (VLD, SDM) |
|