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Paper Abstract and Keywords
Presentation 2008-05-15 16:15
Fabrication and evaluation of InGaPN/GaPN DH LED light emitting diode grown by organometallic vapor phase epitaxy.
Fumiya Matsuno, Susumu Hatakenaka, Yoshiyuki Nakanishi, Hiroshi Okada, Yuzo Furukawa, Akihiro Wakahara (Toyohashi Univ. Tech.)
Abstract (in Japanese) (See Japanese page) 
(in English) III-V-N compound semiconductors are one of the promising materials to be applied in OEIC. GaP0.98N0.02 can be lattice-matched to Si and has be expected as one of the materials for active layer in the OEIC. We investigated electrical properties of GaPN doped with S or C which were grown by OMVPE . For s-doped GaPN, n-type conduction with the carrier concentration of 1017~1018cm-3 was obtained by changing H2S/TBP ratio. Similarly, p-type GaPN with the hole concentration of 1016~1019cm-3 was by controlling C concentration via TBP/TEGa ratio.
A GaPN pn-junction LED and an InGaPN/GaPN DH LED were fabricated on a Si substrate using OMVPE and MEE. The GaPN pn-junction LED’s and the InGaPN/GaPN DH LED’s showed diode characteristic. The GaPN pn-junction LED’s were operated 51A/cm2(100mA) at room temperature, the emission central wavelength was 650nm.
Keyword (in Japanese) (See Japanese page) 
(in English) OEIC / OMVPE / InGaPN / LED / / / /  
Reference Info. IEICE Tech. Rep.
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Conference Information
Committee CPM ED SDM  
Conference Date 2008-05-15 - 2008-05-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials） 
Paper Information
Registration To ED 
Conference Code 2008-05-CPM-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Fabrication and evaluation of InGaPN/GaPN DH LED light emitting diode grown by organometallic vapor phase epitaxy. 
Sub Title (in English)  
Keyword(1) OEIC  
Keyword(2) OMVPE  
Keyword(3) InGaPN  
Keyword(4) LED  
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1st Author's Name Fumiya Matsuno  
1st Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. Tech.)
2nd Author's Name Susumu Hatakenaka  
2nd Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. Tech.)
3rd Author's Name Yoshiyuki Nakanishi  
3rd Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. Tech.)
4th Author's Name Hiroshi Okada  
4th Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. Tech.)
5th Author's Name Yuzo Furukawa  
5th Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. Tech.)
6th Author's Name Akihiro Wakahara  
6th Author's Affiliation Toyohashi University of Technology (Toyohashi Univ. Tech.)
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Speaker Author-1 
Date Time 2008-05-15 16:15:00 
Presentation Time 25 minutes 
Registration for ED 
Paper #  
Volume (vol) vol.108 
Number (no) no.34(ED), no.35(CPM), no.36(SDM) 
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