Paper Abstract and Keywords |
Presentation |
2008-05-15 14:50
Preparation of β-Ga2O3 films by RF magnetron sputtering method Takashi Horiuchi, Masaaki Isai (Shizuoka Univ.) ED2008-5 CPM2008-13 SDM2008-25 Link to ES Tech. Rep. Archives: ED2008-5 CPM2008-13 SDM2008-25 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Interest for environmental problems has been growing these days. Gallium oxide have been focused as an oxygen (O2) gas sensor which is used for controlling exhausted gases at high temperature. These films were deposited by a RF magnetron sputtering. The effects of annealing process and O2 gas flow rate on crystallinity were investigated. As a result, it was found that the crystallinity was improved after annealing process. It was also found that high quality films could be prepared under the Ar:O2 flow rate of 5:1 at the total gas pressure of 2.4sccm. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Gallium oxide / Metal oxides / Magnetron sputtering method / Rapid thermal annealing(RTA) / Oxygen sensor / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 35, CPM2008-13, pp. 19-22, May 2008. |
Paper # |
CPM2008-13 |
Date of Issue |
2008-05-08 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2008-5 CPM2008-13 SDM2008-25 Link to ES Tech. Rep. Archives: ED2008-5 CPM2008-13 SDM2008-25 |
Conference Information |
Committee |
CPM ED SDM |
Conference Date |
2008-05-15 - 2008-05-16 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Nagoya Institute of Technology |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials) |
Paper Information |
Registration To |
CPM |
Conference Code |
2008-05-CPM-ED-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Preparation of β-Ga2O3 films by RF magnetron sputtering method |
Sub Title (in English) |
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Keyword(1) |
Gallium oxide |
Keyword(2) |
Metal oxides |
Keyword(3) |
Magnetron sputtering method |
Keyword(4) |
Rapid thermal annealing(RTA) |
Keyword(5) |
Oxygen sensor |
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1st Author's Name |
Takashi Horiuchi |
1st Author's Affiliation |
Shizuoka University (Shizuoka Univ.) |
2nd Author's Name |
Masaaki Isai |
2nd Author's Affiliation |
Shizuoka University (Shizuoka Univ.) |
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Speaker |
Author-1 |
Date Time |
2008-05-15 14:50:00 |
Presentation Time |
25 minutes |
Registration for |
CPM |
Paper # |
ED2008-5, CPM2008-13, SDM2008-25 |
Volume (vol) |
vol.108 |
Number (no) |
no.34(ED), no.35(CPM), no.36(SDM) |
Page |
pp.19-22 |
#Pages |
4 |
Date of Issue |
2008-05-08 (ED, CPM, SDM) |
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