Paper Abstract and Keywords |
Presentation |
2008-05-16 09:50
Al/Ti/Al Ohmic Contacts for AlGaN/GaN Heterostructures Masanobu Hiroki, Kazumi Nishimura, Noriyuki Watanabe, Yasuhiro Oda, Takashi Kobayashi (NTT PH Lab.) ED2008-11 CPM2008-19 SDM2008-31 Link to ES Tech. Rep. Archives: ED2008-11 CPM2008-19 SDM2008-31 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this letter, we report annealing temperature dependence of Al/Ti/Tl/Ni/Au contact structure on AlGaN/GaN heterostructures. In this structure, low contact resistivity below 5 x 10-6 cm2 was achieved by in wide range of thermal annealing from 650 ºC to 900 ºC, while such low contact was only obtained in the range from 800 ºC to 900 ºC in conventional ohmic contact structure of Ti/Al/Ni/Au. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / AlGaN/GaN / heterostructure / ohmic contact / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 34, ED2008-11, pp. 51-56, May 2008. |
Paper # |
ED2008-11 |
Date of Issue |
2008-05-08 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2008-11 CPM2008-19 SDM2008-31 Link to ES Tech. Rep. Archives: ED2008-11 CPM2008-19 SDM2008-31 |
Conference Information |
Committee |
CPM ED SDM |
Conference Date |
2008-05-15 - 2008-05-16 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Nagoya Institute of Technology |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials) |
Paper Information |
Registration To |
ED |
Conference Code |
2008-05-CPM-ED-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Al/Ti/Al Ohmic Contacts for AlGaN/GaN Heterostructures |
Sub Title (in English) |
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Keyword(1) |
GaN |
Keyword(2) |
AlGaN/GaN |
Keyword(3) |
heterostructure |
Keyword(4) |
ohmic contact |
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1st Author's Name |
Masanobu Hiroki |
1st Author's Affiliation |
NTT Photonics Laboratories (NTT PH Lab.) |
2nd Author's Name |
Kazumi Nishimura |
2nd Author's Affiliation |
NTT Photonics Laboratories (NTT PH Lab.) |
3rd Author's Name |
Noriyuki Watanabe |
3rd Author's Affiliation |
NTT Photonics Laboratories (NTT PH Lab.) |
4th Author's Name |
Yasuhiro Oda |
4th Author's Affiliation |
NTT Photonics Laboratories (NTT PH Lab.) |
5th Author's Name |
Takashi Kobayashi |
5th Author's Affiliation |
NTT Photonics Laboratories (NTT PH Lab.) |
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Speaker |
Author-1 |
Date Time |
2008-05-16 09:50:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2008-11, CPM2008-19, SDM2008-31 |
Volume (vol) |
vol.108 |
Number (no) |
no.34(ED), no.35(CPM), no.36(SDM) |
Page |
pp.51-56 |
#Pages |
6 |
Date of Issue |
2008-05-08 (ED, CPM, SDM) |
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