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Paper Abstract and Keywords
Presentation 2008-05-16 09:50
Al/Ti/Al Ohmic Contacts for AlGaN/GaN Heterostructures
Masanobu Hiroki, Kazumi Nishimura, Noriyuki Watanabe, Yasuhiro Oda, Takashi Kobayashi (NTT PH Lab.) ED2008-11 CPM2008-19 SDM2008-31 Link to ES Tech. Rep. Archives: ED2008-11 CPM2008-19 SDM2008-31
Abstract (in Japanese) (See Japanese page) 
(in English) In this letter, we report annealing temperature dependence of Al/Ti/Tl/Ni/Au contact structure on AlGaN/GaN heterostructures. In this structure, low contact resistivity below 5 x 10-6 cm2 was achieved by in wide range of thermal annealing from 650 ºC to 900 ºC, while such low contact was only obtained in the range from 800 ºC to 900 ºC in conventional ohmic contact structure of Ti/Al/Ni/Au.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / AlGaN/GaN / heterostructure / ohmic contact / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 34, ED2008-11, pp. 51-56, May 2008.
Paper # ED2008-11 
Date of Issue 2008-05-08 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-11 CPM2008-19 SDM2008-31 Link to ES Tech. Rep. Archives: ED2008-11 CPM2008-19 SDM2008-31

Conference Information
Committee CPM ED SDM  
Conference Date 2008-05-15 - 2008-05-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials) 
Paper Information
Registration To ED 
Conference Code 2008-05-CPM-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Al/Ti/Al Ohmic Contacts for AlGaN/GaN Heterostructures 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) AlGaN/GaN  
Keyword(3) heterostructure  
Keyword(4) ohmic contact  
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1st Author's Name Masanobu Hiroki  
1st Author's Affiliation NTT Photonics Laboratories (NTT PH Lab.)
2nd Author's Name Kazumi Nishimura  
2nd Author's Affiliation NTT Photonics Laboratories (NTT PH Lab.)
3rd Author's Name Noriyuki Watanabe  
3rd Author's Affiliation NTT Photonics Laboratories (NTT PH Lab.)
4th Author's Name Yasuhiro Oda  
4th Author's Affiliation NTT Photonics Laboratories (NTT PH Lab.)
5th Author's Name Takashi Kobayashi  
5th Author's Affiliation NTT Photonics Laboratories (NTT PH Lab.)
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Speaker Author-1 
Date Time 2008-05-16 09:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2008-11, CPM2008-19, SDM2008-31 
Volume (vol) vol.108 
Number (no) no.34(ED), no.35(CPM), no.36(SDM) 
Page pp.51-56 
#Pages
Date of Issue 2008-05-08 (ED, CPM, SDM) 


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