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| Presentation | 2008-05-16 11:15 Characterization of Low-Pressure MOCVD-grown AlxGa1-xN on Si substrates Kouichi Hiromori, Hiroyasu Ishikawa, Fumiyuki Tokura, Keita Shimanaka, Naoto Mori, Tomohiko Morimoto (Nagoya Inst. of Tech.)  ED2008-14 CPM2008-22 SDM2008-34 Link to ES Tech. Rep. Archives: ED2008-14 CPM2008-22 SDM2008-34 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | AlxGa1-xN films were grown on Si substrates as a function of reactor pressure using a low-pressure MOCVD method. The Al solid composition and thickness decrease with the increase of the reactor pressure due to the parasitic reaction between metalorganics and ammonia in the vapor phase, depending on the TMA vapor composition. While full-width at half-maximum values of X-ray ω-scan don’t show significant dependence on the reactor pressure, the carbon (C) concentration in AlxGa1-xN decreases over the entire range of the solid composition with the increase of the reactor pressure. The C concentration increases exponentially to the Al solid composition at the higher reactor pressure. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Si substrates / MOCVD / AlGaN / Low-pressure / SIMS / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 35, CPM2008-22, pp. 67-70, May 2008. | |
| Paper # | CPM2008-22 | |
| Date of Issue | 2008-05-08 (ED, CPM, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-14 CPM2008-22 SDM2008-34 Link to ES Tech. Rep. Archives: ED2008-14 CPM2008-22 SDM2008-34 |
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| Conference Information | |
| Committee | CPM ED SDM |
| Conference Date | 2008-05-15 - 2008-05-16 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Institute of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials） |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2008-05-CPM-ED-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of Low-Pressure MOCVD-grown AlxGa1-xN on Si substrates |
| Sub Title (in English) | |
| Keyword(1) | Si substrates |
| Keyword(2) | MOCVD |
| Keyword(3) | AlGaN |
| Keyword(4) | Low-pressure |
| Keyword(5) | SIMS |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kouichi Hiromori |
| 1st Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
| 2nd Author's Name | Hiroyasu Ishikawa |
| 2nd Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
| 3rd Author's Name | Fumiyuki Tokura |
| 3rd Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
| 4th Author's Name | Keita Shimanaka |
| 4th Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
| 5th Author's Name | Naoto Mori |
| 5th Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
| 6th Author's Name | Tomohiko Morimoto |
| 6th Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2008-05-16 11:15:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | ED2008-14, CPM2008-22, SDM2008-34 |
| Volume (vol) | vol.108 |
| Number (no) | no.34(ED), no.35(CPM), no.36(SDM) |
| Page | pp.67-70 |
| #Pages | 4 |
| Date of Issue | 2008-05-08 (ED, CPM, SDM) |
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