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| Presentation | 2008-05-16 13:40 Iodine doping of CdTe Layers on Si Substrates Grown by MOVPE ( I ) Akinobu Watanabe, Yasuhiro Kai, Wataru Yamada, Hatasu Ichihashi, Tomohiro Yoneyama, Daisuke Kato, Kazuya Matsumoto, Yasunori Agata, Madan Niraula, Kazuhito Yasuda (Nagoya Inst. Tech.)  ED2008-17 CPM2008-25 SDM2008-37 Link to ES Tech. Rep. Archives: ED2008-17 CPM2008-25 SDM2008-37 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Iodine doping of CdTe layers grown on Si substrates by metal-organic vapor phase epitaxy has been studied using ethyliodine (EI) as a dopant. CdTe layers were grown at the growth temperature of 325 ℃ and the DETe/DMCd supply ratio of 0.25. n-type layers with electron concentrations from 1013 to 1016 cm-3 were obtained by controlling the supply rate of EI. The grown layers were also examined by photoluminescence (PL) at 4.2K. PL spectra of doped layers showed consistent variation with incorporation of iodine. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | MOVPE / n-CdTe / EI doping / CdTe on Si substrate / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 35, CPM2008-25, pp. 81-84, May 2008. | |
| Paper # | CPM2008-25 | |
| Date of Issue | 2008-05-08 (ED, CPM, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-17 CPM2008-25 SDM2008-37 Link to ES Tech. Rep. Archives: ED2008-17 CPM2008-25 SDM2008-37 |
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| Conference Information | |
| Committee | CPM ED SDM |
| Conference Date | 2008-05-15 - 2008-05-16 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Institute of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials） |
| Paper Information | |
| Registration To | CPM |
| Conference Code | 2008-05-CPM-ED-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Iodine doping of CdTe Layers on Si Substrates Grown by MOVPE ( I ) |
| Sub Title (in English) | |
| Keyword(1) | MOVPE |
| Keyword(2) | n-CdTe |
| Keyword(3) | EI doping |
| Keyword(4) | CdTe on Si substrate |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Akinobu Watanabe |
| 1st Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. Tech.) |
| 2nd Author's Name | Yasuhiro Kai |
| 2nd Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. Tech.) |
| 3rd Author's Name | Wataru Yamada |
| 3rd Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. Tech.) |
| 4th Author's Name | Hatasu Ichihashi |
| 4th Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. Tech.) |
| 5th Author's Name | Tomohiro Yoneyama |
| 5th Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. Tech.) |
| 6th Author's Name | Daisuke Kato |
| 6th Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. Tech.) |
| 7th Author's Name | Kazuya Matsumoto |
| 7th Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. Tech.) |
| 8th Author's Name | Yasunori Agata |
| 8th Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. Tech.) |
| 9th Author's Name | Madan Niraula |
| 9th Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. Tech.) |
| 10th Author's Name | Kazuhito Yasuda |
| 10th Author's Affiliation | Nagoya Institute of Technology (Nagoya Inst. Tech.) |
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| Speaker | Author-1 |
| Date Time | 2008-05-16 13:40:00 |
| Presentation Time | 25 minutes |
| Registration for | CPM |
| Paper # | ED2008-17, CPM2008-25, SDM2008-37 |
| Volume (vol) | vol.108 |
| Number (no) | no.34(ED), no.35(CPM), no.36(SDM) |
| Page | pp.81-84 |
| #Pages | 4 |
| Date of Issue | 2008-05-08 (ED, CPM, SDM) |
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