Paper Abstract and Keywords |
Presentation |
2008-06-09 13:30
[Tutorial Lecture]
Current Status and Prospects of High Mobility Channel Technologies for High performance CMOS Shinichi Takagi (Univ. of Tokyo/MIRAI-AIST) SDM2008-42 Link to ES Tech. Rep. Archives: SDM2008-42 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Saturation of CMOS performance has been evident in the present 45 nm technology and beyond because of the a variety of limitations on the miniaturization. Thus, channel engineering, including the enhancement of drive current due to high mobility channel materials and multi-gate structures with robustness against short channel effects, has currently been recognized as mandatory for high performance CMOS. In this paper, we review the current status, the critical issues and the future prospects of the development of mobility-enhanced CMOS device structures using strained-Si, SiGe, Ge and III-V semiconductor MOS channels and the carrier transport properties in those channels. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
CMOS / mobility / strained Si / channel engineering / SiGe / Ge / III-V semiconductor / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 80, SDM2008-42, pp. 1-6, June 2008. |
Paper # |
SDM2008-42 |
Date of Issue |
2008-06-02 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2008-42 Link to ES Tech. Rep. Archives: SDM2008-42 |
Conference Information |
Committee |
SDM |
Conference Date |
2008-06-09 - 2008-06-10 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
An401・402, Inst. Indus. Sci., The Univ. of Tokyo |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Science and Sci. & Technol. for Thin Dielectrics for MIS Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2008-06-SDM |
Language |
English (Japanese title is available) |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Current Status and Prospects of High Mobility Channel Technologies for High performance CMOS |
Sub Title (in English) |
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CMOS |
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mobility |
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strained Si |
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channel engineering |
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SiGe |
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Ge |
Keyword(7) |
III-V semiconductor |
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1st Author's Name |
Shinichi Takagi |
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The University of Tokyo (Univ. of Tokyo/MIRAI-AIST) |
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Speaker |
Author-1 |
Date Time |
2008-06-09 13:30:00 |
Presentation Time |
60 minutes |
Registration for |
SDM |
Paper # |
SDM2008-42 |
Volume (vol) |
vol.108 |
Number (no) |
no.80 |
Page |
pp.1-6 |
#Pages |
6 |
Date of Issue |
2008-06-02 (SDM) |
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