Paper Abstract and Keywords |
Presentation |
2008-06-09 16:50
Inversion-Layer Capacitance and Low-Field Mobility Characteristics in Si(110) pMOSFETs Masumi Saitoh, Shigeki Kobayashi, Ken Uchida (Toshiba) SDM2008-46 Link to ES Tech. Rep. Archives: SDM2008-46 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Basic transport properties of Si (110) pMOSFETs are systematically investigated. Inversion-layer capacitance of (110) pFETs is larger than that of (100) pFETs owing to larger out-of-plane effective mass in (110) pFETs. It is first observed that low-field mobility increases with the increase in substrate impurity concentration (Nsub) in (110)/<110> pFETs. Although mobility enhancement ratio by uniaxial stress is lower in high-Nsub (110) pFETs than in (100) pFETs, excellent performance is obtained in strained (110)/<110> pFETs as a result of much higher mobility without strain. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
(110) plane / inversion-layer capacitance / effective mass / low-field mobility / substrate impurity concentration / uniaxial stress / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 80, SDM2008-46, pp. 23-27, June 2008. |
Paper # |
SDM2008-46 |
Date of Issue |
2008-06-02 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2008-46 Link to ES Tech. Rep. Archives: SDM2008-46 |
Conference Information |
Committee |
SDM |
Conference Date |
2008-06-09 - 2008-06-10 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
An401・402, Inst. Indus. Sci., The Univ. of Tokyo |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Science and Sci. & Technol. for Thin Dielectrics for MIS Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2008-06-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Inversion-Layer Capacitance and Low-Field Mobility Characteristics in Si(110) pMOSFETs |
Sub Title (in English) |
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Keyword(1) |
(110) plane |
Keyword(2) |
inversion-layer capacitance |
Keyword(3) |
effective mass |
Keyword(4) |
low-field mobility |
Keyword(5) |
substrate impurity concentration |
Keyword(6) |
uniaxial stress |
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Keyword(8) |
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1st Author's Name |
Masumi Saitoh |
1st Author's Affiliation |
Toshiba Corporation (Toshiba) |
2nd Author's Name |
Shigeki Kobayashi |
2nd Author's Affiliation |
Toshiba Corporation (Toshiba) |
3rd Author's Name |
Ken Uchida |
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Toshiba Corporation (Toshiba) |
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Speaker |
Author-1 |
Date Time |
2008-06-09 16:50:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2008-46 |
Volume (vol) |
vol.108 |
Number (no) |
no.80 |
Page |
pp.23-27 |
#Pages |
6 |
Date of Issue |
2008-06-02 (SDM) |