Paper Abstract and Keywords |
Presentation |
2008-06-10 14:35
Bio-nano dot floating gate memory with High-k films Kosuke Ohara, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC) SDM2008-57 Link to ES Tech. Rep. Archives: SDM2008-57 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The memory characteristics of nanodot floating gate memories with High-k tunnel oxide were investigated using MOS capacitors. High density BND absorption on High-k was confirmed by using APTES. Memory window of MOS capacitors with High-k were larger than SiO2. In addition, charge retention characteristic of MOS capacitors were improved by using High-k as tunnel dioxide. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
floating gate memorry / ferritin / High-k / MOS devices / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 80, SDM2008-57, pp. 89-92, June 2008. |
Paper # |
SDM2008-57 |
Date of Issue |
2008-06-02 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2008-57 Link to ES Tech. Rep. Archives: SDM2008-57 |
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