IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2008-06-10 14:35
Bio-nano dot floating gate memory with High-k films
Kosuke Ohara, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita (NAIST), Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru (STARC) SDM2008-57 Link to ES Tech. Rep. Archives: SDM2008-57
Abstract (in Japanese) (See Japanese page) 
(in English) The memory characteristics of nanodot floating gate memories with High-k tunnel oxide were investigated using MOS capacitors. High density BND absorption on High-k was confirmed by using APTES. Memory window of MOS capacitors with High-k were larger than SiO2. In addition, charge retention characteristic of MOS capacitors were improved by using High-k as tunnel dioxide.
Keyword (in Japanese) (See Japanese page) 
(in English) floating gate memorry / ferritin / High-k / MOS devices / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 80, SDM2008-57, pp. 89-92, June 2008.
Paper # SDM2008-57 
Date of Issue 2008-06-02 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2008-57 Link to ES Tech. Rep. Archives: SDM2008-57

Conference Information
Committee SDM  
Conference Date 2008-06-09 - 2008-06-10 
Place (in Japanese) (See Japanese page) 
Place (in English) An401・402, Inst. Indus. Sci., The Univ. of Tokyo 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Sci. & Technol. for Thin Dielectrics for MIS Devices 
Paper Information
Registration To SDM 
Conference Code 2008-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Bio-nano dot floating gate memory with High-k films 
Sub Title (in English)  
Keyword(1) floating gate memorry  
Keyword(2) ferritin  
Keyword(3) High-k  
Keyword(4) MOS devices  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Kosuke Ohara  
1st Author's Affiliation Nara Institute of Science and Technology (NAIST)
2nd Author's Name Yukiharu Uraoka  
2nd Author's Affiliation Nara Institute of Science and Technology (NAIST)
3rd Author's Name Takashi Fuyuki  
3rd Author's Affiliation Nara Institute of Science and Technology (NAIST)
4th Author's Name Ichiro Yamashita  
4th Author's Affiliation Nara Institute of Science and Technology (NAIST)
5th Author's Name Toshitake Yaegashi  
5th Author's Affiliation Semiconductor Technology Academic Research Center (STARC)
6th Author's Name Masahiro Moniwa  
6th Author's Affiliation Semiconductor Technology Academic Research Center (STARC)
7th Author's Name Masaki Yoshimaru  
7th Author's Affiliation Semiconductor Technology Academic Research Center (STARC)
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2008-06-10 14:35:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2008-57 
Volume (vol) vol.108 
Number (no) no.80 
Page pp.89-92 
#Pages
Date of Issue 2008-06-02 (SDM) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan