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| Presentation | 2008-06-10 12:45 XPS real-time monitoring on the development of Si suboxides during formation of thermal oxide on Si(110) surface Yoshihisa Yamamoto, Hideaki Togashi, Atsushi Konno, Mitsutaka Matsumoto, Atsushi Kato, Eiji Saito, Maki Suemitsu (Tohoku Univ.), Yuden Teraoka, Akitaka Yoshigoe (JAEA)  SDM2008-53 Link to ES Tech. Rep. Archives: SDM2008-53 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The growth process of thermal oxides on Si(110) surface and its interfacial bonding structures have been investigated by using real-time synchrotron radiation photoemission spectroscopy. As a result, it was confirmed that on Si(110) oxidation, the Si^{3+} component in the Si 2p core-level spectra is always much higher than the Si^{4+} component for 0-1 mono-layer (ML) formation of the oxide. Observations the time-evolution of the O 1s core-level spectrum indicates that the autocatalytic reaction model found valid on the Si(001) oxidation also applies to Si(110) oxidation. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Si(110） / Dry O2 gas oxidation / Photoemission / Real-time measurement / Autocatalytic reaction / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 80, SDM2008-53, pp. 65-70, June 2008. | |
| Paper # | SDM2008-53 | |
| Date of Issue | 2008-06-02 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2008-53 Link to ES Tech. Rep. Archives: SDM2008-53 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2008-06-09 - 2008-06-10 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | An401・402, Inst. Indus. Sci., The Univ. of Tokyo |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Science and Sci. & Technol. for Thin Dielectrics for MIS Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-06-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | XPS real-time monitoring on the development of Si suboxides during formation of thermal oxide on Si(110) surface |
| Sub Title (in English) | |
| Keyword(1) | Si(110） |
| Keyword(2) | Dry O2 gas oxidation |
| Keyword(3) | Photoemission |
| Keyword(4) | Real-time measurement |
| Keyword(5) | Autocatalytic reaction |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Yoshihisa Yamamoto |
| 1st Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 2nd Author's Name | Hideaki Togashi |
| 2nd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 3rd Author's Name | Atsushi Konno |
| 3rd Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 4th Author's Name | Mitsutaka Matsumoto |
| 4th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 5th Author's Name | Atsushi Kato |
| 5th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 6th Author's Name | Eiji Saito |
| 6th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 7th Author's Name | Maki Suemitsu |
| 7th Author's Affiliation | Tohoku University (Tohoku Univ.) |
| 8th Author's Name | Yuden Teraoka |
| 8th Author's Affiliation | Japan Atomic Energy Agency (JAEA) |
| 9th Author's Name | Akitaka Yoshigoe |
| 9th Author's Affiliation | Japan Atomic Energy Agency (JAEA) |
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| Speaker | Author-1 |
| Date Time | 2008-06-10 12:45:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | SDM2008-53 |
| Volume (vol) | vol.108 |
| Number (no) | no.80 |
| Page | pp.65-70 |
| #Pages | 6 |
| Date of Issue | 2008-06-02 (SDM) |
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