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Paper Abstract and Keywords
Presentation 2008-06-13 13:25
I-V and C-V characteristics of p-GaN schottky contacts -- Carrier concentration and metal work function dependences --
Yoshihiro Fukushima, Keita Ogisu, Masaaki Kuzuhara, Kenji Shiojima (Fukui Univ.) ED2008-23 Link to ES Tech. Rep. Archives: ED2008-23
Abstract (in Japanese) (See Japanese page) 
(in English) Carrier concentration (P) and metal work function dependences of Schottky barrier height (qB) were measured from I-V and C-V characteristics for different four kind of Mg-doped p-GaN and ten kinds of metal films. With decreasing Na from 3.8x1018 to 6x1016cm-3, qB increased from 1 to 2.2 eV. We obtained the strong P dependence even in a low value of P range in 1016cm-3. qB were as high as over 1.6 eV from I-V and about 2.2 eV from C-V characteristics. The slopes of metal work function dependences were as low as +0.28 and -0.12 from I-V and C-V characteristics respectively, which showed weak dependence. These results indicate that strong Fermi-level pinning occur at the metal/p-GaN interface.
Keyword (in Japanese) (See Japanese page) 
(in English) p-GaN / metal/samiconductor / Schottky barrier height / doping concentration / metal work function / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 87, ED2008-23, pp. 5-10, June 2008.
Paper # ED2008-23 
Date of Issue 2008-06-06 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-23 Link to ES Tech. Rep. Archives: ED2008-23

Conference Information
Committee ED  
Conference Date 2008-06-13 - 2008-06-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Kanazawa University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process and device technology od semiconductors (surface, interface, reliability, etc.) 
Paper Information
Registration To ED 
Conference Code 2008-06-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) I-V and C-V characteristics of p-GaN schottky contacts 
Sub Title (in English) Carrier concentration and metal work function dependences 
Keyword(1) p-GaN  
Keyword(2) metal/samiconductor  
Keyword(3) Schottky barrier height  
Keyword(4) doping concentration  
Keyword(5) metal work function  
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1st Author's Name Yoshihiro Fukushima  
1st Author's Affiliation Fukui University (Fukui Univ.)
2nd Author's Name Keita Ogisu  
2nd Author's Affiliation Fukui University (Fukui Univ.)
3rd Author's Name Masaaki Kuzuhara  
3rd Author's Affiliation Fukui University (Fukui Univ.)
4th Author's Name Kenji Shiojima  
4th Author's Affiliation Fukui University (Fukui Univ.)
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Speaker Author-1 
Date Time 2008-06-13 13:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2008-23 
Volume (vol) vol.108 
Number (no) no.87 
Page pp.5-10 
#Pages
Date of Issue 2008-06-06 (ED) 


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