Paper Abstract and Keywords |
Presentation |
2008-06-13 13:25
I-V and C-V characteristics of p-GaN schottky contacts
-- Carrier concentration and metal work function dependences -- Yoshihiro Fukushima, Keita Ogisu, Masaaki Kuzuhara, Kenji Shiojima (Fukui Univ.) ED2008-23 Link to ES Tech. Rep. Archives: ED2008-23 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Carrier concentration (P) and metal work function dependences of Schottky barrier height (qB) were measured from I-V and C-V characteristics for different four kind of Mg-doped p-GaN and ten kinds of metal films. With decreasing Na from 3.8x1018 to 6x1016cm-3, qB increased from 1 to 2.2 eV. We obtained the strong P dependence even in a low value of P range in 1016cm-3. qB were as high as over 1.6 eV from I-V and about 2.2 eV from C-V characteristics. The slopes of metal work function dependences were as low as +0.28 and -0.12 from I-V and C-V characteristics respectively, which showed weak dependence. These results indicate that strong Fermi-level pinning occur at the metal/p-GaN interface. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
p-GaN / metal/samiconductor / Schottky barrier height / doping concentration / metal work function / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 87, ED2008-23, pp. 5-10, June 2008. |
Paper # |
ED2008-23 |
Date of Issue |
2008-06-06 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2008-23 Link to ES Tech. Rep. Archives: ED2008-23 |
Conference Information |
Committee |
ED |
Conference Date |
2008-06-13 - 2008-06-14 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kanazawa University |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process and device technology od semiconductors (surface, interface, reliability, etc.) |
Paper Information |
Registration To |
ED |
Conference Code |
2008-06-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
I-V and C-V characteristics of p-GaN schottky contacts |
Sub Title (in English) |
Carrier concentration and metal work function dependences |
Keyword(1) |
p-GaN |
Keyword(2) |
metal/samiconductor |
Keyword(3) |
Schottky barrier height |
Keyword(4) |
doping concentration |
Keyword(5) |
metal work function |
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1st Author's Name |
Yoshihiro Fukushima |
1st Author's Affiliation |
Fukui University (Fukui Univ.) |
2nd Author's Name |
Keita Ogisu |
2nd Author's Affiliation |
Fukui University (Fukui Univ.) |
3rd Author's Name |
Masaaki Kuzuhara |
3rd Author's Affiliation |
Fukui University (Fukui Univ.) |
4th Author's Name |
Kenji Shiojima |
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Fukui University (Fukui Univ.) |
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Speaker |
Author-1 |
Date Time |
2008-06-13 13:25:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2008-23 |
Volume (vol) |
vol.108 |
Number (no) |
no.87 |
Page |
pp.5-10 |
#Pages |
6 |
Date of Issue |
2008-06-06 (ED) |
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