Paper Abstract and Keywords |
Presentation |
2008-07-09 14:35
[Invited Talk]
High-K Dielectric for Charge Trap-type Flash Memory Application Byung-Jin Cho (KAIST), Wei He, Jing Pu (National Univ. of Singapore) ED2008-46 SDM2008-65 Link to ES Tech. Rep. Archives: ED2008-46 SDM2008-65 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
In this paper, lanthanide group oxides, AlLaOx, HfLaOx, Gd2O3 and GdAlO3, used as blocking oxide in charge trap - type Flash memory devices have been studied. The ALD process for AlLaOx and HfLaOx with high deposition rate, good uniformity and self-limiting behavior were successfully developed. The charge trap memory with AlLaOx and HfLaOx as blocking layer demonstrates much faster operation speed but comparable (AlLaOx) or worse (HfLaOx) retention, compared to Al2O3 blocking layer control sample. Another group of high-・ materials, Gd2O3-based dielectric, used as the blocking oxide demonstrates enhanced operation speed. Incorporation of Al into Gd2O3 improves the retention further, which is an attractive candidate for blocking layer in charge trap – type Flash memory devices. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Flash memory / ALD / High-K dielectric / charge trap / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 122, SDM2008-65, pp. 37-41, July 2008. |
Paper # |
SDM2008-65 |
Date of Issue |
2008-07-02 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2008-46 SDM2008-65 Link to ES Tech. Rep. Archives: ED2008-46 SDM2008-65 |
Conference Information |
Committee |
SDM ED |
Conference Date |
2008-07-09 - 2008-07-11 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kaderu2・7 |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2008-07-SDM-ED |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
High-K Dielectric for Charge Trap-type Flash Memory Application |
Sub Title (in English) |
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Keyword(1) |
Flash memory |
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ALD |
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High-K dielectric |
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charge trap |
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1st Author's Name |
Byung-Jin Cho |
1st Author's Affiliation |
Korea Advanced Institute of Science and Technology (KAIST) |
2nd Author's Name |
Wei He |
2nd Author's Affiliation |
National University of Singapore (National Univ. of Singapore) |
3rd Author's Name |
Jing Pu |
3rd Author's Affiliation |
National University of Singapore (National Univ. of Singapore) |
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Speaker |
Author-1 |
Date Time |
2008-07-09 14:35:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
ED2008-46, SDM2008-65 |
Volume (vol) |
vol.108 |
Number (no) |
no.121(ED), no.122(SDM) |
Page |
pp.37-41 |
#Pages |
5 |
Date of Issue |
2008-07-02 (ED, SDM) |
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