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| Presentation | 2008-07-09 11:40 [Invited Talk] AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer Tadayoshi Deguchi (New Japan Radio), Takashi Egawa (Nagoya Inst. of Tech.)  ED2008-41 SDM2008-60 Link to ES Tech. Rep. Archives: ED2008-41 SDM2008-60 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We review our studies on AlGaN/GaN-based electron devices with a low-temperature GaN (LT-GaN) cap layer, such as heterostructure field-effect transistors (HFETs) and Schottky barrier diodes (SBDs) are reviewed. The nNovel HFETs with a LT-GaN cap layer were have been proposed and fabricated, and we found that by utilizingusing the this LT-GaN cap layer as a gate insulator and providing surface passivation helps to is found to significantly suppress current collapse and gate leakage in AlGaN/GaN HFETs. Furthermore, the combination of a LT-GaN cap layer and a SiN film for the surface passivation led to both the suppression of current collapse and no significant degradation in the gate-drain breakdown voltage. We also investigated the correlation between the crystalline quality of LT-GaN cap layers and the current collapse in AlGaN/GaN HFETs, and found that a polycrystalline structure provides the most effective LT-GaN cap layer for suppressing current collapse. AlGaN/GaN SBDs using a LT-GaN cap layer to provide edge termination were also fabricated on Si substrates. The collapse-free AlGaN/GaN SBDs exhibited a high breakdown voltage of 1530 V. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | AlGaN/GaN / low-temperature GaN / SBD / HFET / contact resistance / current collapse / leakage current / breakdown voltage | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 121, ED2008-41, pp. 9-14, July 2008. | |
| Paper # | ED2008-41 | |
| Date of Issue | 2008-07-02 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-41 SDM2008-60 Link to ES Tech. Rep. Archives: ED2008-41 SDM2008-60 |
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| Conference Information | |
| Committee | SDM ED |
| Conference Date | 2008-07-09 - 2008-07-11 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kaderu２・７ |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2008-07-SDM-ED |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | AlGaN/GaN-based Electron Devices with Low-temperature GaN Cap Layer |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN |
| Keyword(2) | low-temperature GaN |
| Keyword(3) | SBD |
| Keyword(4) | HFET |
| Keyword(5) | contact resistance |
| Keyword(6) | current collapse |
| Keyword(7) | leakage current |
| Keyword(8) | breakdown voltage |
| 1st Author's Name | Tadayoshi Deguchi |
| 1st Author's Affiliation | New Japan Radio Co., Ltd. (New Japan Radio) |
| 2nd Author's Name | Takashi Egawa |
| 2nd Author's Affiliation | Nagoya Insitute of Technology (Nagoya Inst. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2008-07-09 11:40:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2008-41, SDM2008-60 |
| Volume (vol) | vol.108 |
| Number (no) | no.121(ED), no.122(SDM) |
| Page | pp.9-14 |
| #Pages | 6 |
| Date of Issue | 2008-07-02 (ED, SDM) |
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