Paper Abstract and Keywords |
Presentation |
2008-07-09 17:35
Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation Sang Hyuk Park, Sangwoo Kang, Dong-Seup Lee, Jung Han Lee, Hong-Seon Yang, Kwon-Chil Kang, Joung-Eob Lee, Jong Duk Lee, Byung-Gook Park (Seoul National Univ.) ED2008-53 SDM2008-72 Link to ES Tech. Rep. Archives: ED2008-53 SDM2008-72 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A Recessed-Channel Dual-Gate Single Electron Transistor (RCDG-SET) which has the possibility of room temperature operation is proposed. Side gates of a RCDG-SET form electrical tunneling barriers around a recessed channel, which is newly introduced. And not only control gate but also a recessed channel is self aligned to source and drain. Characteristics of a RCDG-SET are compared with those of previous DG-SETs through device simulation (SILVACO). Due to a recessed channel and a self aligned structure, MOSFET current which causes low Peak-to-Valley Current Ratio (PVCR) is suppressed. This property of a RCDG-SET is expected to contribute for room temperature operation. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Single Electron Transistor / recessed channel / MOSFET current / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 122, SDM2008-72, pp. 73-76, July 2008. |
Paper # |
SDM2008-72 |
Date of Issue |
2008-07-02 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2008-53 SDM2008-72 Link to ES Tech. Rep. Archives: ED2008-53 SDM2008-72 |
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