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Paper Abstract and Keywords
Presentation 2008-07-09 17:35
Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation
Sang Hyuk Park, Sangwoo Kang, Dong-Seup Lee, Jung Han Lee, Hong-Seon Yang, Kwon-Chil Kang, Joung-Eob Lee, Jong Duk Lee, Byung-Gook Park (Seoul National Univ.) ED2008-53 SDM2008-72 Link to ES Tech. Rep. Archives: ED2008-53 SDM2008-72
Abstract (in Japanese) (See Japanese page) 
(in English) A Recessed-Channel Dual-Gate Single Electron Transistor (RCDG-SET) which has the possibility of room temperature operation is proposed. Side gates of a RCDG-SET form electrical tunneling barriers around a recessed channel, which is newly introduced. And not only control gate but also a recessed channel is self aligned to source and drain. Characteristics of a RCDG-SET are compared with those of previous DG-SETs through device simulation (SILVACO). Due to a recessed channel and a self aligned structure, MOSFET current which causes low Peak-to-Valley Current Ratio (PVCR) is suppressed. This property of a RCDG-SET is expected to contribute for room temperature operation.
Keyword (in Japanese) (See Japanese page) 
(in English) Single Electron Transistor / recessed channel / MOSFET current / / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 122, SDM2008-72, pp. 73-76, July 2008.
Paper # SDM2008-72 
Date of Issue 2008-07-02 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2008-53 SDM2008-72 Link to ES Tech. Rep. Archives: ED2008-53 SDM2008-72

Conference Information
Committee SDM ED  
Conference Date 2008-07-09 - 2008-07-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Kaderu2・7 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2008-07-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation 
Sub Title (in English)  
Keyword(1) Single Electron Transistor  
Keyword(2) recessed channel  
Keyword(3) MOSFET current  
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1st Author's Name Sang Hyuk Park  
1st Author's Affiliation Seoul National University (Seoul National Univ.)
2nd Author's Name Sangwoo Kang  
2nd Author's Affiliation Seoul National University (Seoul National Univ.)
3rd Author's Name Dong-Seup Lee  
3rd Author's Affiliation Seoul National University (Seoul National Univ.)
4th Author's Name Jung Han Lee  
4th Author's Affiliation Seoul National University (Seoul National Univ.)
5th Author's Name Hong-Seon Yang  
5th Author's Affiliation Seoul National University (Seoul National Univ.)
6th Author's Name Kwon-Chil Kang  
6th Author's Affiliation Seoul National University (Seoul National Univ.)
7th Author's Name Joung-Eob Lee  
7th Author's Affiliation Seoul National University (Seoul National Univ.)
8th Author's Name Jong Duk Lee  
8th Author's Affiliation Seoul National University (Seoul National Univ.)
9th Author's Name Byung-Gook Park  
9th Author's Affiliation Seoul National University (Seoul National Univ.)
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Speaker Author-1 
Date Time 2008-07-09 17:35:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # ED2008-53, SDM2008-72 
Volume (vol) vol.108 
Number (no) no.121(ED), no.122(SDM) 
Page pp.73-76 
#Pages
Date of Issue 2008-07-02 (ED, SDM) 


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