IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2008-07-11 09:00
[Invited Talk] SiC Power Transistor and Its Application for DC/DC Converter
Makoto Kitabatake (Matsushita Electric Industrial) ED2008-71 SDM2008-90 Link to ES Tech. Rep. Archives: ED2008-71 SDM2008-90
Abstract (in Japanese) (See Japanese page) 
(in English) The SiC power transistor is demonstrated as the normally-off MOSFET with high blocking voltage of 1400V and low Ron of 6.7 mΩcm2. The SiC MOSFET application for the 400V/3kW/100kHz DC/DC converter is also demonstrated. High speed (tf<48ns) SW of the SiC MOSFET was observed with Rg<5.6Ωgate drive. The turn-off SW loss is reduced to <77μJ/pulse which is less than 1/10 of that of the Si IGBT.
Keyword (in Japanese) (See Japanese page) 
(in English) SiC / MOSFET / normally-off / Ron / switch / converter / power conversion /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 121, ED2008-71, pp. 165-169, July 2008.
Paper # ED2008-71 
Date of Issue 2008-07-02 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-71 SDM2008-90 Link to ES Tech. Rep. Archives: ED2008-71 SDM2008-90

Conference Information
Committee SDM ED  
Conference Date 2008-07-09 - 2008-07-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Kaderu2・7 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To ED 
Conference Code 2008-07-SDM-ED 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) SiC Power Transistor and Its Application for DC/DC Converter 
Sub Title (in English)  
Keyword(1) SiC  
Keyword(2) MOSFET  
Keyword(3) normally-off  
Keyword(4) Ron  
Keyword(5) switch  
Keyword(6) converter  
Keyword(7) power conversion  
Keyword(8)  
1st Author's Name Makoto Kitabatake  
1st Author's Affiliation Advanced Device Development Center, Matsushita Electric Industrial Co., Ltd. (Matsushita Electric Industrial)
2nd Author's Name  
2nd Author's Affiliation ()
3rd Author's Name  
3rd Author's Affiliation ()
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2008-07-11 09:00:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2008-71, SDM2008-90 
Volume (vol) vol.108 
Number (no) no.121(ED), no.122(SDM) 
Page pp.165-169 
#Pages
Date of Issue 2008-07-02 (ED, SDM) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan