Paper Abstract and Keywords |
Presentation |
2008-07-11 11:35
A Latchup-Free Power-Rail ESD Clamp Circuit with Stacked-Bipolar Devices in a High-Voltage Technology Jae-Young Park, Jong-Kyu Song, Chang-Soo Jang, Joon-Tae Jang, San-Hong Kim, Sung-Ki Kim, Taek-Soo Kim (Dongbu HiTek) ED2008-76 SDM2008-95 Link to ES Tech. Rep. Archives: ED2008-76 SDM2008-95 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The holding voltage of the high-voltage devices the snapback breakdown condition has been known to be much smaller than the power supply voltage. Such characteristics cause the high-voltage ICs to be susceptible to the transient latch-up failure in the practical system applications, especially when these devices are used in the power-rail ESD clamp circuit. A new latchup-free design of the power-rail ESD clamp circuit with stacked-bipolar devices is proposed and successfully verified in a 0.35・ BCD (Bipolar-CMOS-DMOS) process to achieve the desired ESD level. The total holding voltage of the stacked-bipolar devices in the snapback breakdown condition can be larger than the power supply voltage. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
ESD (Electrostatic Discharge) / power-rail ESD clamp circuit / transient latch-up / stacked-bipolar devices / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 122, SDM2008-95, pp. 193-197, July 2008. |
Paper # |
SDM2008-95 |
Date of Issue |
2008-07-02 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2008-76 SDM2008-95 Link to ES Tech. Rep. Archives: ED2008-76 SDM2008-95 |
Conference Information |
Committee |
SDM ED |
Conference Date |
2008-07-09 - 2008-07-11 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kaderu2・7 |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2008-07-SDM-ED |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
A Latchup-Free Power-Rail ESD Clamp Circuit with Stacked-Bipolar Devices in a High-Voltage Technology |
Sub Title (in English) |
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Keyword(1) |
ESD (Electrostatic Discharge) |
Keyword(2) |
power-rail ESD clamp circuit |
Keyword(3) |
transient latch-up |
Keyword(4) |
stacked-bipolar devices |
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Keyword(6) |
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1st Author's Name |
Jae-Young Park |
1st Author's Affiliation |
Dongbu HiTek (Dongbu HiTek) |
2nd Author's Name |
Jong-Kyu Song |
2nd Author's Affiliation |
Dongbu HiTek (Dongbu HiTek) |
3rd Author's Name |
Chang-Soo Jang |
3rd Author's Affiliation |
Dongbu HiTek (Dongbu HiTek) |
4th Author's Name |
Joon-Tae Jang |
4th Author's Affiliation |
Dongbu HiTek (Dongbu HiTek) |
5th Author's Name |
San-Hong Kim |
5th Author's Affiliation |
Dongbu HiTek (Dongbu HiTek) |
6th Author's Name |
Sung-Ki Kim |
6th Author's Affiliation |
Dongbu HiTek (Dongbu HiTek) |
7th Author's Name |
Taek-Soo Kim |
7th Author's Affiliation |
Dongbu HiTek (Dongbu HiTek) |
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Speaker |
Author-1 |
Date Time |
2008-07-11 11:35:00 |
Presentation Time |
15 minutes |
Registration for |
SDM |
Paper # |
ED2008-76, SDM2008-95 |
Volume (vol) |
vol.108 |
Number (no) |
no.121(ED), no.122(SDM) |
Page |
pp.193-197 |
#Pages |
5 |
Date of Issue |
2008-07-02 (ED, SDM) |
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