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Paper Abstract and Keywords
Presentation 2008-07-11 14:35
Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures
Hironari Chikaoka, Youichi Takakuwa, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui) ED2008-104 SDM2008-123 Link to ES Tech. Rep. Archives: ED2008-104 SDM2008-123
Abstract (in Japanese) (See Japanese page) 
(in English) This paper describes optimum design for non-polar AlGaN/GaN heterostructures with reduced ohmic contact resistances. The tunneling contact resistivity was evaluated based upon numerical calculation of tunneling current density across AlGaN barrier layers. By introducing an n+-AlXGa1-XN layer between n+-GaN cap layer and AlGaN barrier layer, the tunneling contact resistivity was improved by as large as four orders of magnitude, compared to standard AlGaN/GaN structures.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / contact resistivity / HEMT / contact resistance / tunneling current density / potential barrier / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 122, SDM2008-123, pp. 337-340, July 2008.
Paper # SDM2008-123 
Date of Issue 2008-07-02 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-104 SDM2008-123 Link to ES Tech. Rep. Archives: ED2008-104 SDM2008-123

Conference Information
Committee SDM ED  
Conference Date 2008-07-09 - 2008-07-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Kaderu2・7 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2008-07-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) contact resistivity  
Keyword(3) HEMT  
Keyword(4) contact resistance  
Keyword(5) tunneling current density  
Keyword(6) potential barrier  
Keyword(7)  
Keyword(8)  
1st Author's Name Hironari Chikaoka  
1st Author's Affiliation University of Fukui (Univ. of Fukui)
2nd Author's Name Youichi Takakuwa  
2nd Author's Affiliation University of Fukui (Univ. of Fukui)
3rd Author's Name Kenji Shiojima  
3rd Author's Affiliation University of Fukui (Univ. of Fukui)
4th Author's Name Masaaki Kuzuhara  
4th Author's Affiliation University of Fukui (Univ. of Fukui)
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Speaker Author-1 
Date Time 2008-07-11 14:35:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # ED2008-104, SDM2008-123 
Volume (vol) vol.108 
Number (no) no.121(ED), no.122(SDM) 
Page pp.337-340 
#Pages
Date of Issue 2008-07-02 (ED, SDM) 


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