Paper Abstract and Keywords |
Presentation |
2008-07-11 14:35
Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures Hironari Chikaoka, Youichi Takakuwa, Kenji Shiojima, Masaaki Kuzuhara (Univ. of Fukui) ED2008-104 SDM2008-123 Link to ES Tech. Rep. Archives: ED2008-104 SDM2008-123 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
This paper describes optimum design for non-polar AlGaN/GaN heterostructures with reduced ohmic contact resistances. The tunneling contact resistivity was evaluated based upon numerical calculation of tunneling current density across AlGaN barrier layers. By introducing an n+-AlXGa1-XN layer between n+-GaN cap layer and AlGaN barrier layer, the tunneling contact resistivity was improved by as large as four orders of magnitude, compared to standard AlGaN/GaN structures. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / contact resistivity / HEMT / contact resistance / tunneling current density / potential barrier / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 122, SDM2008-123, pp. 337-340, July 2008. |
Paper # |
SDM2008-123 |
Date of Issue |
2008-07-02 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2008-104 SDM2008-123 Link to ES Tech. Rep. Archives: ED2008-104 SDM2008-123 |
Conference Information |
Committee |
SDM ED |
Conference Date |
2008-07-09 - 2008-07-11 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kaderu2・7 |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
SDM |
Conference Code |
2008-07-SDM-ED |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Simulation of Tunneling Contact Resistivity in Non-polar AlGaN/GaN Heterostructures |
Sub Title (in English) |
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Keyword(1) |
GaN |
Keyword(2) |
contact resistivity |
Keyword(3) |
HEMT |
Keyword(4) |
contact resistance |
Keyword(5) |
tunneling current density |
Keyword(6) |
potential barrier |
Keyword(7) |
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Keyword(8) |
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1st Author's Name |
Hironari Chikaoka |
1st Author's Affiliation |
University of Fukui (Univ. of Fukui) |
2nd Author's Name |
Youichi Takakuwa |
2nd Author's Affiliation |
University of Fukui (Univ. of Fukui) |
3rd Author's Name |
Kenji Shiojima |
3rd Author's Affiliation |
University of Fukui (Univ. of Fukui) |
4th Author's Name |
Masaaki Kuzuhara |
4th Author's Affiliation |
University of Fukui (Univ. of Fukui) |
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Speaker |
Author-1 |
Date Time |
2008-07-11 14:35:00 |
Presentation Time |
15 minutes |
Registration for |
SDM |
Paper # |
ED2008-104, SDM2008-123 |
Volume (vol) |
vol.108 |
Number (no) |
no.121(ED), no.122(SDM) |
Page |
pp.337-340 |
#Pages |
4 |
Date of Issue |
2008-07-02 (ED, SDM) |
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