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Paper Abstract and Keywords
Presentation 2008-11-14 15:00
A Quantum Mechanical Study of Effect of Single Attractive Ions on Electron Transport in Nanoscale Transistors
Yoshinari Kamakura, Gennady Mil'nikov, Nobuya Mori (Osaka Univ.), Tatsuya Ezaki (Hiroshima Univ.) SDM2008-179
Abstract (in Japanese) (See Japanese page) 
(in English) A comprehensive and rigorous study of the impact of single attractive ion in undoped channel MGFETs is presented by using a new 3D NEGF technique. A single donor induces VT shift, and its impact is most significant when the donor is located at the top of the potential barrier, while on current is not affected so much due to the screening effect. To reduce the intrinsic device parameter fluctuation, control of lateral S/D doing abruptness is important, and gate-all-around structure has better robustness than the double gate structure.
Keyword (in Japanese) (See Japanese page) 
(in English) nonequilibrium Green's function method / MOSFET / device simulation / fluctuation / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 292, SDM2008-179, pp. 61-66, Nov. 2008.
Paper # SDM2008-179 
Date of Issue 2008-11-06 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2008-11-13 - 2008-11-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit Simulation, etc. 
Paper Information
Registration To SDM 
Conference Code 2008-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A Quantum Mechanical Study of Effect of Single Attractive Ions on Electron Transport in Nanoscale Transistors 
Sub Title (in English)  
Keyword(1) nonequilibrium Green's function method  
Keyword(2) MOSFET  
Keyword(3) device simulation  
Keyword(4) fluctuation  
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Keyword(6)  
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1st Author's Name Yoshinari Kamakura  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name Gennady Mil'nikov  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Nobuya Mori  
3rd Author's Affiliation Osaka University (Osaka Univ.)
4th Author's Name Tatsuya Ezaki  
4th Author's Affiliation Hiroshima Univeristy (Hiroshima Univ.)
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Speaker Author-1 
Date Time 2008-11-14 15:00:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2008-179 
Volume (vol) vol.108 
Number (no) no.292 
Page pp.61-66 
#Pages 6 
Date of Issue 2008-11-06 (SDM) 

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