Paper Abstract and Keywords |
Presentation |
2008-11-14 15:25
Three-dimensional NEGF simulation of gate tunnel current in ultra-small MOSFETs Hideki Minari, Daisuke Nishitani, Nobuya Mori (Osaka Univ.) SDM2008-180 Link to ES Tech. Rep. Archives: SDM2008-180 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have numerically studied gate-tunneling in ultra-small MOSFETs within a three-dimensional nonequilibrium Green’s function (NEGF) formalism. Simulation results show that the tunnel transmission to gate decreases with energy. We also investigate effects of interface roughness on gate-tunneling. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Silicon / MOSFET / NEGF / Gate leakage current / Surface roughness / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 292, SDM2008-180, pp. 67-70, Nov. 2008. |
Paper # |
SDM2008-180 |
Date of Issue |
2008-11-06 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2008-180 Link to ES Tech. Rep. Archives: SDM2008-180 |
Conference Information |
Committee |
SDM |
Conference Date |
2008-11-13 - 2008-11-14 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process, Device, Circuit Simulation, etc. |
Paper Information |
Registration To |
SDM |
Conference Code |
2008-11-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Three-dimensional NEGF simulation of gate tunnel current in ultra-small MOSFETs |
Sub Title (in English) |
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Keyword(1) |
Silicon |
Keyword(2) |
MOSFET |
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NEGF |
Keyword(4) |
Gate leakage current |
Keyword(5) |
Surface roughness |
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1st Author's Name |
Hideki Minari |
1st Author's Affiliation |
Osaka University (Osaka Univ.) |
2nd Author's Name |
Daisuke Nishitani |
2nd Author's Affiliation |
Osaka University (Osaka Univ.) |
3rd Author's Name |
Nobuya Mori |
3rd Author's Affiliation |
Osaka University (Osaka Univ.) |
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Speaker |
Author-1 |
Date Time |
2008-11-14 15:25:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
SDM2008-180 |
Volume (vol) |
vol.108 |
Number (no) |
no.292 |
Page |
pp.67-70 |
#Pages |
4 |
Date of Issue |
2008-11-06 (SDM) |
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