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Paper Abstract and Keywords
Presentation 2008-11-27 15:25
Ultraghin InN/(In)GaN quantum well structure for a new active layer of blue-green light
Song-Bek Che, Akihiko Yuki, Hiroshi Watanabe, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ.) ED2008-163 CPM2008-112 LQE2008-107 Link to ES Tech. Rep. Archives: ED2008-163 CPM2008-112 LQE2008-107
Abstract (in Japanese) (See Japanese page) 
(in English) 1 monolayer (ML) thick InN quantum well (QW) with InGaN barrier grown by radio-frequency plasma assisted molecular beam epitaxy (rf-MBE) is proposed for a new active layer of blue-green light emitters. Compared with previously reported 1 ML thick InN/GaN QWs, extended emission wavelength up to pure green region (~530 nm) is expected for these QWs with InGaN barriers. It is found that for the InN/InGaN QW structure, in which the InGaN layer is used as a barrier instead of GaN, very thin InN well layers are basically formed in the same manner as the InN/GaN QWs. Bluish-green emission is observed in the QW light-emitting diode (LED) and no blue shift is observed in electroluminescence spectra from the LED for various current levels, indicating an enhancement in the quantum efficiency by inserting the ultrathin InN well leading to suppression of the quantum confined Stark effect.
Keyword (in Japanese) (See Japanese page) 
(in English) InN / Ultrathin quantum well / Light-emitting diodes / Quantum-confined Stark effect / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 322, CPM2008-112, pp. 51-56, Nov. 2008.
Paper # CPM2008-112 
Date of Issue 2008-11-20 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2008-163 CPM2008-112 LQE2008-107 Link to ES Tech. Rep. Archives: ED2008-163 CPM2008-112 LQE2008-107

Conference Information
Committee LQE ED CPM  
Conference Date 2008-11-27 - 2008-11-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Paper Information
Registration To CPM 
Conference Code 2008-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Ultraghin InN/(In)GaN quantum well structure for a new active layer of blue-green light 
Sub Title (in English)  
Keyword(1) InN  
Keyword(2) Ultrathin quantum well  
Keyword(3) Light-emitting diodes  
Keyword(4) Quantum-confined Stark effect  
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1st Author's Name Song-Bek Che  
1st Author's Affiliation Chiba University (Chiba Univ.)
2nd Author's Name Akihiko Yuki  
2nd Author's Affiliation Chiba University (Chiba Univ.)
3rd Author's Name Hiroshi Watanabe  
3rd Author's Affiliation Chiba University (Chiba Univ.)
4th Author's Name Yoshihiro Ishitani  
4th Author's Affiliation Chiba University (Chiba Univ.)
5th Author's Name Akihiko Yoshikawa  
5th Author's Affiliation Chiba University (Chiba Univ.)
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Speaker Author-1 
Date Time 2008-11-27 15:25:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # ED2008-163, CPM2008-112, LQE2008-107 
Volume (vol) vol.108 
Number (no) no.321(ED), no.322(CPM), no.323(LQE) 
Page pp.51-56 
#Pages
Date of Issue 2008-11-20 (ED, CPM, LQE) 


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