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| Presentation | 2008-11-27 14:35 High-Power GaN-based Blue-Violet Laser Diodes Shingo Kameyama, Yasumitsu Kunou, Kyouji Inoshita, Daijiro Inoue, Yasuyuki Bessho, Takenori Goto, Tatsuya Kunisato (SANYO)  ED2008-161 CPM2008-110 LQE2008-105 Link to ES Tech. Rep. Archives: ED2008-161 CPM2008-110 LQE2008-105 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Development of high speed recording and large capacity recording for Blu-ray optical disc systems using blue-violet laser diodes have progressed. A high-power blue-violet laser diode is required strongly to achieve these systems. We have fabricated blue-violet laser diodes with high-power characteristic on GaN substrates by using new facet coating structure and reducing the internal loss in the device and making long cavity length. These laser diodes have high reliability for more than 1000h with a light output power of 450 mW at 80 °C under pulsed operation. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | laser diode / GaN-based semiconductor / high power / internal loss / long cavity / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 323, LQE2008-105, pp. 41-44, Nov. 2008. | |
| Paper # | LQE2008-105 | |
| Date of Issue | 2008-11-20 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-161 CPM2008-110 LQE2008-105 Link to ES Tech. Rep. Archives: ED2008-161 CPM2008-110 LQE2008-105 |
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| Conference Information | |
| Committee | LQE ED CPM |
| Conference Date | 2008-11-27 - 2008-11-28 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Institute of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2008-11-LQE-ED-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-Power GaN-based Blue-Violet Laser Diodes |
| Sub Title (in English) | |
| Keyword(1) | laser diode |
| Keyword(2) | GaN-based semiconductor |
| Keyword(3) | high power |
| Keyword(4) | internal loss |
| Keyword(5) | long cavity |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Shingo Kameyama |
| 1st Author's Affiliation | SANYO Electric Co., Ltd (SANYO) |
| 2nd Author's Name | Yasumitsu Kunou |
| 2nd Author's Affiliation | SANYO Electric Co., Ltd (SANYO) |
| 3rd Author's Name | Kyouji Inoshita |
| 3rd Author's Affiliation | SANYO Electric Co., Ltd (SANYO) |
| 4th Author's Name | Daijiro Inoue |
| 4th Author's Affiliation | SANYO Electric Co., Ltd (SANYO) |
| 5th Author's Name | Yasuyuki Bessho |
| 5th Author's Affiliation | SANYO Electric Co., Ltd (SANYO) |
| 6th Author's Name | Takenori Goto |
| 6th Author's Affiliation | SANYO Electric Co., Ltd (SANYO) |
| 7th Author's Name | Tatsuya Kunisato |
| 7th Author's Affiliation | SANYO Electric Co., Ltd (SANYO) |
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| Speaker | Author-1 |
| Date Time | 2008-11-27 14:35:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2008-161, CPM2008-110, LQE2008-105 |
| Volume (vol) | vol.108 |
| Number (no) | no.321(ED), no.322(CPM), no.323(LQE) |
| Page | pp.41-44 |
| #Pages | 4 |
| Date of Issue | 2008-11-20 (ED, CPM, LQE) |
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