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| Presentation | 2008-11-28 13:30 Normally-off mode AlGaN/GaN HEMTs with p-InGaN Cap Layer Xu Li, Masahito Kurouchi, Shigeru Kishimoto, Takashi Mizutani (Nagoya Univ.), Fumihiko Nakamura (POWDEC)  ED2008-177 CPM2008-126 LQE2008-121 Link to ES Tech. Rep. Archives: ED2008-177 CPM2008-126 LQE2008-121 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have fabricated AlGaN/GaN HEMTs with a thin p-InGaN cap layer and measured I-V characteristics of the devices. For the activation of Mg in p-InGaN cap layer, annealing at 800℃ was relatively good. Compared to AlGaN/GaN HEMTs without InGaN cap layer and i-InGaN cap HEMTs, the threshold voltage of p-InGaN cap (800℃) HEMTs shifted about 2.2 V, 1.3 V respectively and was 1.1 V. The complete normally-off operation of AlGaN/GaN HEMTs has been realized. For p-InGaN cap (800℃) HEMTs, a higher gmmax of 146 mS/mm than that of HEMTs without InGaN cap of 128 mS/mm was obtained. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | AlGaN/GaN HEMT / p-InGaN cap / activation annealing / normally-off / gate leakage current / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 321, ED2008-177, pp. 125-130, Nov. 2008. | |
| Paper # | ED2008-177 | |
| Date of Issue | 2008-11-20 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-177 CPM2008-126 LQE2008-121 Link to ES Tech. Rep. Archives: ED2008-177 CPM2008-126 LQE2008-121 |
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| Conference Information | |
| Committee | LQE ED CPM |
| Conference Date | 2008-11-27 - 2008-11-28 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Nagoya Institute of Technology |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2008-11-LQE-ED-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Normally-off mode AlGaN/GaN HEMTs with p-InGaN Cap Layer |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN HEMT |
| Keyword(2) | p-InGaN cap |
| Keyword(3) | activation annealing |
| Keyword(4) | normally-off |
| Keyword(5) | gate leakage current |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Xu Li |
| 1st Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 2nd Author's Name | Masahito Kurouchi |
| 2nd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 3rd Author's Name | Shigeru Kishimoto |
| 3rd Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 4th Author's Name | Takashi Mizutani |
| 4th Author's Affiliation | Nagoya University (Nagoya Univ.) |
| 5th Author's Name | Fumihiko Nakamura |
| 5th Author's Affiliation | POWDEC K.K. (POWDEC) |
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| Speaker | Author-1 |
| Date Time | 2008-11-28 13:30:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2008-177, CPM2008-126, LQE2008-121 |
| Volume (vol) | vol.108 |
| Number (no) | no.321(ED), no.322(CPM), no.323(LQE) |
| Page | pp.125-130 |
| #Pages | 6 |
| Date of Issue | 2008-11-20 (ED, CPM, LQE) |
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