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| Presentation | 2008-12-05 16:10 Electrical characterization of HfO2/Ge MIS structure treated by fluorine gas Hideto Imajo, Hyun Lee, Yuichi Yoshioka, Takeshi Kanashima, Masanori Okuyama (Osaka Univ.)  SDM2008-195 Link to ES Tech. Rep. Archives: SDM2008-195 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | High-k/Ge MIS is expected as gate structure of the next-generation FET which has high mobility. However, electrical performance of High-k/Ge MIS structure such as C-V and J-V characteristics is very inferior to those of Si MIS structure. So, we have tried to improve the electrical properties and interface states by fluorine treatment. We used HfO_2 film as the high-k dielectrics deposited by photo-assisted MOCVD. Fluorine treatment was taken by exposing surface of germanium to fluorine (5%) gas before deposition of HfO_2 film. From the results of C-V and J-V measurements, it could be concluded that fluorine treatment improves the electrical properties of HfO_2/Ge MIS structure. Moreover, the interface states have been evaluated by deep leve transient spectroscopy (DLTS) method, which gives the interface trap density in the band-gap. The results were that the interface trap density in the band-gap of HfO_2/Ge MIS structure was decreased by fluorine treatment and the peaks found in the sample without fluorine treatment disappeared. So, fluorine treatment improves the interface property. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | fluorine treatment / Deep level transient spectroscopy (DLTS) / interface states / HfO_2/Ge MIS / photo-assisted MOCVD / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 335, SDM2008-195, pp. 59-64, Dec. 2008. | |
| Paper # | SDM2008-195 | |
| Date of Issue | 2008-11-28 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2008-195 Link to ES Tech. Rep. Archives: SDM2008-195 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2008-12-05 - 2008-12-05 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kyoto University, Katsura Campus, A1-001 |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Fabrication and Characterization of Si and Si-related Materials and Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-12-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical characterization of HfO2/Ge MIS structure treated by fluorine gas |
| Sub Title (in English) | |
| Keyword(1) | fluorine treatment |
| Keyword(2) | Deep level transient spectroscopy (DLTS) |
| Keyword(3) | interface states |
| Keyword(4) | HfO_2/Ge MIS |
| Keyword(5) | photo-assisted MOCVD |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Hideto Imajo |
| 1st Author's Affiliation | Osaka University (Osaka Univ.) |
| 2nd Author's Name | Hyun Lee |
| 2nd Author's Affiliation | Osaka University (Osaka Univ.) |
| 3rd Author's Name | Yuichi Yoshioka |
| 3rd Author's Affiliation | Osaka University (Osaka Univ.) |
| 4th Author's Name | Takeshi Kanashima |
| 4th Author's Affiliation | Osaka University (Osaka Univ.) |
| 5th Author's Name | Masanori Okuyama |
| 5th Author's Affiliation | Osaka University (Osaka Univ.) |
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| Speaker | Author-1 |
| Date Time | 2008-12-05 16:10:00 |
| Presentation Time | 20 minutes |
| Registration for | SDM |
| Paper # | SDM2008-195 |
| Volume (vol) | vol.108 |
| Number (no) | no.335 |
| Page | pp.59-64 |
| #Pages | 6 |
| Date of Issue | 2008-11-28 (SDM) |
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