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Paper Abstract and Keywords
Presentation 2009-01-14 15:50
Evaluation of reverse conduction GaN FET
Osamu Machida, Nobuo Kaneko, Ryohei Baba, Michiyoshi Izawa, Shinichi Iwakami, Masataka Yanagihara, Hirokazu Goto, Akio Iwabuchi (Sanken Electric Co.) ED2008-203 MW2008-168 Link to ES Tech. Rep. Archives: ED2008-203 MW2008-168
Abstract (in Japanese) (See Japanese page) 
(in English) We fabricated reverse conduction (RC) GaN FETs which monolithically integrated normally-off mode GaN FET and GaN SBD. Two types of RC-GaN FET, the FET with parallel-SBD and the FET with internal-SBD exhibited a good reverse conductive operation and a low recovery current. The FET with internal-SBD have especially low Qgd, and could be operated with very short switching time. A GaN inverter was fabricated using the RC-GaN FETs, and three phase induction motor driving was demonstrated with it, and the excellent operation waveform was confirmed.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / FET / SBD / reverse conduction / inverter / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 376, ED2008-203, pp. 29-34, Jan. 2009.
Paper # ED2008-203 
Date of Issue 2009-01-07 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-203 MW2008-168 Link to ES Tech. Rep. Archives: ED2008-203 MW2008-168

Conference Information
Committee MW ED  
Conference Date 2009-01-14 - 2009-01-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor ICs, High-speed and high-frequency devices 
Paper Information
Registration To ED 
Conference Code 2009-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Evaluation of reverse conduction GaN FET 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) FET  
Keyword(3) SBD  
Keyword(4) reverse conduction  
Keyword(5) inverter  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Osamu Machida  
1st Author's Affiliation Sanken Electric Co.,Ltd. (Sanken Electric Co.)
2nd Author's Name Nobuo Kaneko  
2nd Author's Affiliation Sanken Electric Co.,Ltd. (Sanken Electric Co.)
3rd Author's Name Ryohei Baba  
3rd Author's Affiliation Sanken Electric Co.,Ltd. (Sanken Electric Co.)
4th Author's Name Michiyoshi Izawa  
4th Author's Affiliation Sanken Electric Co.,Ltd. (Sanken Electric Co.)
5th Author's Name Shinichi Iwakami  
5th Author's Affiliation Sanken Electric Co.,Ltd. (Sanken Electric Co.)
6th Author's Name Masataka Yanagihara  
6th Author's Affiliation Sanken Electric Co.,Ltd. (Sanken Electric Co.)
7th Author's Name Hirokazu Goto  
7th Author's Affiliation Sanken Electric Co.,Ltd. (Sanken Electric Co.)
8th Author's Name Akio Iwabuchi  
8th Author's Affiliation Sanken Electric Co.,Ltd. (Sanken Electric Co.)
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Speaker Author-1 
Date Time 2009-01-14 15:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2008-203, MW2008-168 
Volume (vol) vol.108 
Number (no) no.376(ED), no.377(MW) 
Page pp.29-34 
#Pages
Date of Issue 2009-01-07 (ED, MW) 


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