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| Presentation | 2009-01-15 13:50 Reduction of the Base Transit Time in Ultra-thin Graded-Base InP/GaInAs Heterojunction Bipolar Transistor Takafumi Uesawa, Masayuki Yamada, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Inst. of Tech.)  ED2008-212 MW2008-177 Link to ES Tech. Rep. Archives: ED2008-212 MW2008-177 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Abstract We report a Monte Carlo analysis of base transit time in ultra-thin and heavily-doped InP/InGaAs HBT’s. In ultra-thin base layer less than 20nm, the influence of the plasmon scattering in electron transport is significant. Therefore, it is effective to use graded base in order to sweep out quasi-thermalized electrons. As for graded base, we carried out Monte Carlo Simulation under the condition that the total of graded energy and conduction band discontinuity between base and emitter is constant. Although the best graded energy to minimize base transit time is from 5kT to 7kT, small grading such as 1-2kT is also effective. When 2kT grading is introduced in 20 nm base, 40% reduction of base transit time is calculated. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | HeteroJunction Bipolar Transistor(HBT) / Base Transit Time / Graded Base / MonteCarlo / Hole-Plasmon Scattering / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 376, ED2008-212, pp. 83-88, Jan. 2009. | |
| Paper # | ED2008-212 | |
| Date of Issue | 2009-01-07 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
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| Download PDF | ED2008-212 MW2008-177 Link to ES Tech. Rep. Archives: ED2008-212 MW2008-177 |
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| Conference Information | |
| Committee | MW ED |
| Conference Date | 2009-01-14 - 2009-01-16 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor ICs, High-speed and high-frequency devices |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2009-01-MW-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Reduction of the Base Transit Time in Ultra-thin Graded-Base InP/GaInAs Heterojunction Bipolar Transistor |
| Sub Title (in English) | |
| Keyword(1) | HeteroJunction Bipolar Transistor(HBT) |
| Keyword(2) | Base Transit Time |
| Keyword(3) | Graded Base |
| Keyword(4) | MonteCarlo |
| Keyword(5) | Hole-Plasmon Scattering |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takafumi Uesawa |
| 1st Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 2nd Author's Name | Masayuki Yamada |
| 2nd Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 3rd Author's Name | Yasuyuki Miyamoto |
| 3rd Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
| 4th Author's Name | Kazuhito Furuya |
| 4th Author's Affiliation | Tokyo Institute of Technology (Tokyo Inst. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2009-01-15 13:50:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2008-212, MW2008-177 |
| Volume (vol) | vol.108 |
| Number (no) | no.376(ED), no.377(MW) |
| Page | pp.83-88 |
| #Pages | 6 |
| Date of Issue | 2009-01-07 (ED, MW) |
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