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Paper Abstract and Keywords
Presentation 2009-01-15 11:20
Low Loss Coplanar Waveguide Structure on High-Resistivity Silicon Substrate
Takehiko Makita, Isao Tamai, Shinichi Hoshi, Shohei Seki (Oki Electric Industry Co., Ltd.) ED2008-209 MW2008-174 Link to ES Tech. Rep. Archives: ED2008-209 MW2008-174
Abstract (in Japanese) (See Japanese page) 
(in English) We have fabricated and evaluated attenuation characteristics of coplanar waveguide (CPW) on high-resisitivity silicon substrate in order to realize low loss CPW whose attenuation constant is as low as that on semi-insulating compound semiconductor for microwave and millimeter wave band. When an insulated SiN layer was inserted between the CPW and high-resistivity silicon substrate, it was found that the attenuation constant exceeded 1dB/mm at 1GHz. The larger attenuation can be explained well by assuming a low resistivity layer between silicon substrate and insulated layer according to the equivalent circuit of the CPW. The CPW on high-resistivity silicon substrate with attenuation constant of less than 1dB/mm could be obtained by etching the insulated layer between the center strip and both side ground planes, which is comparable with that of CPW formed on the semi-insulating compound semiconductor substrate. This CPW structure enables high-resistivity silicon substrate to be adapted for multichip module technology.
Keyword (in Japanese) (See Japanese page) 
(in English) Coplanar Waveguide / High-Resistivity Silicon Substrate / Low Loss / / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 376, ED2008-209, pp. 65-70, Jan. 2009.
Paper # ED2008-209 
Date of Issue 2009-01-07 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-209 MW2008-174 Link to ES Tech. Rep. Archives: ED2008-209 MW2008-174

Conference Information
Committee MW ED  
Conference Date 2009-01-14 - 2009-01-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor ICs, High-speed and high-frequency devices 
Paper Information
Registration To ED 
Conference Code 2009-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Low Loss Coplanar Waveguide Structure on High-Resistivity Silicon Substrate 
Sub Title (in English)  
Keyword(1) Coplanar Waveguide  
Keyword(2) High-Resistivity Silicon Substrate  
Keyword(3) Low Loss  
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1st Author's Name Takehiko Makita  
1st Author's Affiliation Oki Electric Industry Co., Ltd. (Oki Electric Industry Co., Ltd.)
2nd Author's Name Isao Tamai  
2nd Author's Affiliation Oki Electric Industry Co., Ltd. (Oki Electric Industry Co., Ltd.)
3rd Author's Name Shinichi Hoshi  
3rd Author's Affiliation Oki Electric Industry Co., Ltd. (Oki Electric Industry Co., Ltd.)
4th Author's Name Shohei Seki  
4th Author's Affiliation Oki Electric Industry Co., Ltd. (Oki Electric Industry Co., Ltd.)
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Speaker Author-1 
Date Time 2009-01-15 11:20:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2008-209, MW2008-174 
Volume (vol) vol.108 
Number (no) no.376(ED), no.377(MW) 
Page pp.65-70 
#Pages
Date of Issue 2009-01-07 (ED, MW) 


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