Paper Abstract and Keywords |
Presentation |
2009-01-15 11:20
Low Loss Coplanar Waveguide Structure on High-Resistivity Silicon Substrate Takehiko Makita, Isao Tamai, Shinichi Hoshi, Shohei Seki (Oki Electric Industry Co., Ltd.) ED2008-209 MW2008-174 Link to ES Tech. Rep. Archives: ED2008-209 MW2008-174 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We have fabricated and evaluated attenuation characteristics of coplanar waveguide (CPW) on high-resisitivity silicon substrate in order to realize low loss CPW whose attenuation constant is as low as that on semi-insulating compound semiconductor for microwave and millimeter wave band. When an insulated SiN layer was inserted between the CPW and high-resistivity silicon substrate, it was found that the attenuation constant exceeded 1dB/mm at 1GHz. The larger attenuation can be explained well by assuming a low resistivity layer between silicon substrate and insulated layer according to the equivalent circuit of the CPW. The CPW on high-resistivity silicon substrate with attenuation constant of less than 1dB/mm could be obtained by etching the insulated layer between the center strip and both side ground planes, which is comparable with that of CPW formed on the semi-insulating compound semiconductor substrate. This CPW structure enables high-resistivity silicon substrate to be adapted for multichip module technology. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Coplanar Waveguide / High-Resistivity Silicon Substrate / Low Loss / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 376, ED2008-209, pp. 65-70, Jan. 2009. |
Paper # |
ED2008-209 |
Date of Issue |
2009-01-07 (ED, MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2008-209 MW2008-174 Link to ES Tech. Rep. Archives: ED2008-209 MW2008-174 |
Conference Information |
Committee |
MW ED |
Conference Date |
2009-01-14 - 2009-01-16 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Compound Semiconductor ICs, High-speed and high-frequency devices |
Paper Information |
Registration To |
ED |
Conference Code |
2009-01-MW-ED |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Low Loss Coplanar Waveguide Structure on High-Resistivity Silicon Substrate |
Sub Title (in English) |
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Keyword(1) |
Coplanar Waveguide |
Keyword(2) |
High-Resistivity Silicon Substrate |
Keyword(3) |
Low Loss |
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1st Author's Name |
Takehiko Makita |
1st Author's Affiliation |
Oki Electric Industry Co., Ltd. (Oki Electric Industry Co., Ltd.) |
2nd Author's Name |
Isao Tamai |
2nd Author's Affiliation |
Oki Electric Industry Co., Ltd. (Oki Electric Industry Co., Ltd.) |
3rd Author's Name |
Shinichi Hoshi |
3rd Author's Affiliation |
Oki Electric Industry Co., Ltd. (Oki Electric Industry Co., Ltd.) |
4th Author's Name |
Shohei Seki |
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Oki Electric Industry Co., Ltd. (Oki Electric Industry Co., Ltd.) |
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Speaker |
Author-1 |
Date Time |
2009-01-15 11:20:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2008-209, MW2008-174 |
Volume (vol) |
vol.108 |
Number (no) |
no.376(ED), no.377(MW) |
Page |
pp.65-70 |
#Pages |
6 |
Date of Issue |
2009-01-07 (ED, MW) |
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