IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2009-01-16 09:55
Effect of Temperature on Cryogenic DC and RF Characteristics of AlGaN/GaN MIS-HEMTs
Akira Endoh, Issei Watanabe, Yoshimi Yamashita (National Inst. of Info and Com Tech.), Takashi Mimura (National Inst. of Info and Com Tech/Fujitsu Lab Ltd.,), Toshiaki Matsui (National Inst. of Info and Com Tech.) ED2008-219 MW2008-184 Link to ES Tech. Rep. Archives: ED2008-219 MW2008-184
Abstract (in Japanese) (See Japanese page) 
(in English) We fabricated AlGaN/GaN MIS-HEMTs (metal-insulator-semiconductor high electron mobility transistors) with SiN/SiO2/SiN triple-layer insulators and measured their DC and RF characteristics at 300, 220, 150, 77 and 16 K. The values of the maximum drain-source current Ids, the maximum transconductance gm_max and the cutoff frequency fT increased with a decrease in temperature at relatively high temperatures, i.e. between 150 and 300 K. At temperatures below 100 K, the values of Ids, gm_max and fT increased slightly. We also carried out Monte Carlo simulations of electron transport in bulk wurtzite GaN at various temperatures and electric fields. The steady-state drift velocity of electrons showed a trend similar to those of the values of Ids, gm_max and fT.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaN/GaN / MIS / HEMT / Cryogenic characteristics / Maximum transconductance / Cutoff frequency / Monte Carlo simulations / Electron drift velocity  
Reference Info. IEICE Tech. Rep., vol. 108, no. 376, ED2008-219, pp. 119-123, Jan. 2009.
Paper # ED2008-219 
Date of Issue 2009-01-07 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-219 MW2008-184 Link to ES Tech. Rep. Archives: ED2008-219 MW2008-184

Conference Information
Committee MW ED  
Conference Date 2009-01-14 - 2009-01-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor ICs, High-speed and high-frequency devices 
Paper Information
Registration To ED 
Conference Code 2009-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of Temperature on Cryogenic DC and RF Characteristics of AlGaN/GaN MIS-HEMTs 
Sub Title (in English)  
Keyword(1) AlGaN/GaN  
Keyword(2) MIS  
Keyword(3) HEMT  
Keyword(4) Cryogenic characteristics  
Keyword(5) Maximum transconductance  
Keyword(6) Cutoff frequency  
Keyword(7) Monte Carlo simulations  
Keyword(8) Electron drift velocity  
1st Author's Name Akira Endoh  
1st Author's Affiliation National Institute of Information and Communications Technology (National Inst. of Info and Com Tech.)
2nd Author's Name Issei Watanabe  
2nd Author's Affiliation National Institute of Information and Communications Technology (National Inst. of Info and Com Tech.)
3rd Author's Name Yoshimi Yamashita  
3rd Author's Affiliation National Institute of Information and Communications Technology (National Inst. of Info and Com Tech.)
4th Author's Name Takashi Mimura  
4th Author's Affiliation Fujitsu Laboratories Ltd. (National Inst. of Info and Com Tech/Fujitsu Lab Ltd.,)
5th Author's Name Toshiaki Matsui  
5th Author's Affiliation National Institute of Information and Communications Technology (National Inst. of Info and Com Tech.)
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2009-01-16 09:55:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2008-219, MW2008-184 
Volume (vol) vol.108 
Number (no) no.376(ED), no.377(MW) 
Page pp.119-123 
#Pages
Date of Issue 2009-01-07 (ED, MW) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan