Paper Abstract and Keywords |
Presentation |
2009-01-16 09:55
Effect of Temperature on Cryogenic DC and RF Characteristics of AlGaN/GaN MIS-HEMTs Akira Endoh, Issei Watanabe, Yoshimi Yamashita (National Inst. of Info and Com Tech.), Takashi Mimura (National Inst. of Info and Com Tech/Fujitsu Lab Ltd.,), Toshiaki Matsui (National Inst. of Info and Com Tech.) ED2008-219 MW2008-184 Link to ES Tech. Rep. Archives: ED2008-219 MW2008-184 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We fabricated AlGaN/GaN MIS-HEMTs (metal-insulator-semiconductor high electron mobility transistors) with SiN/SiO2/SiN triple-layer insulators and measured their DC and RF characteristics at 300, 220, 150, 77 and 16 K. The values of the maximum drain-source current Ids, the maximum transconductance gm_max and the cutoff frequency fT increased with a decrease in temperature at relatively high temperatures, i.e. between 150 and 300 K. At temperatures below 100 K, the values of Ids, gm_max and fT increased slightly. We also carried out Monte Carlo simulations of electron transport in bulk wurtzite GaN at various temperatures and electric fields. The steady-state drift velocity of electrons showed a trend similar to those of the values of Ids, gm_max and fT. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlGaN/GaN / MIS / HEMT / Cryogenic characteristics / Maximum transconductance / Cutoff frequency / Monte Carlo simulations / Electron drift velocity |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 376, ED2008-219, pp. 119-123, Jan. 2009. |
Paper # |
ED2008-219 |
Date of Issue |
2009-01-07 (ED, MW) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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ED2008-219 MW2008-184 Link to ES Tech. Rep. Archives: ED2008-219 MW2008-184 |
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