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| Presentation | 2009-01-16 10:55 High-Power GaN-HEMT with High Three-Terminal Breakdown Voltage for W-band Applications Kozo Makiyama, Toshihiro Ohki, Masahito Kanamura, Kazukiyo Joshin, Kenji Imanishi (Fujitsu Ltd/Fujitsu Lab. Ltd.), Naoki Hara (Fujitsu Lab. Ltd.), Toshihide Kikkawa (Fujitsu Ltd/Fujitsu Lab. Ltd.)  ED2008-221 MW2008-186 Link to ES Tech. Rep. Archives: ED2008-221 MW2008-186 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We reported on a technology to improve the three-terminal breakdown voltage of a GaN high electron mobility transistor (GaN-HEMT) for a millimeter-wave amplifier. A GaN-HEMT promises excellent performance for high-power millimeter-wave applications. Up till now, a lot of research has been reported on the improvement of high-power millimeter-wave amplifiers. To fabricate such amplifiers, three-terminal pinched-off-current must be decreased to less than 10-6 A/mm when the gate length becomes less than 0.1 m. In this work, the epitaxial structure has been optimized to reduce the pinched-off current. As a result, we demonstrated a high fmax of over 200GHz with pinched-off current of 10-6 A/mm at Vds of 30 V for a device with a gate length of 100 nm. The power characteristics at W-band were also investigated, we demonstrated Pout of 0.77 W/mm. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN-HEMT / amplifier / millimeter-wave / three-terminal breakdown voltage / pinched-off current / drain leakage current / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 376, ED2008-221, pp. 129-133, Jan. 2009. | |
| Paper # | ED2008-221 | |
| Date of Issue | 2009-01-07 (ED, MW) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-221 MW2008-186 Link to ES Tech. Rep. Archives: ED2008-221 MW2008-186 |
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| Conference Information | |
| Committee | MW ED |
| Conference Date | 2009-01-14 - 2009-01-16 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Compound Semiconductor ICs, High-speed and high-frequency devices |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2009-01-MW-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-Power GaN-HEMT with High Three-Terminal Breakdown Voltage for W-band Applications |
| Sub Title (in English) | |
| Keyword(1) | GaN-HEMT |
| Keyword(2) | amplifier |
| Keyword(3) | millimeter-wave |
| Keyword(4) | three-terminal breakdown voltage |
| Keyword(5) | pinched-off current |
| Keyword(6) | drain leakage current |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kozo Makiyama |
| 1st Author's Affiliation | Fujitsu Limited (Fujitsu Ltd/Fujitsu Lab. Ltd.) |
| 2nd Author's Name | Toshihiro Ohki |
| 2nd Author's Affiliation | Fujitsu Limited (Fujitsu Ltd/Fujitsu Lab. Ltd.) |
| 3rd Author's Name | Masahito Kanamura |
| 3rd Author's Affiliation | Fujitsu Limited (Fujitsu Ltd/Fujitsu Lab. Ltd.) |
| 4th Author's Name | Kazukiyo Joshin |
| 4th Author's Affiliation | Fujitsu Limited (Fujitsu Ltd/Fujitsu Lab. Ltd.) |
| 5th Author's Name | Kenji Imanishi |
| 5th Author's Affiliation | Fujitsu Limited (Fujitsu Ltd/Fujitsu Lab. Ltd.) |
| 6th Author's Name | Naoki Hara |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Lab. Ltd.) |
| 7th Author's Name | Toshihide Kikkawa |
| 7th Author's Affiliation | Fujitsu Limited (Fujitsu Ltd/Fujitsu Lab. Ltd.) |
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| Speaker | Author-1 |
| Date Time | 2009-01-16 10:55:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2008-221, MW2008-186 |
| Volume (vol) | vol.108 |
| Number (no) | no.376(ED), no.377(MW) |
| Page | pp.129-133 |
| #Pages | 5 |
| Date of Issue | 2009-01-07 (ED, MW) |
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