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Paper Abstract and Keywords
Presentation 2009-01-16 09:30
C-band GaN-HEMT Power Amplifier with Over 300-W Output Power and Over 50-% Efficiency
Hisao Shigematsu, Yusuke Inoue, Satoshi Masuda, Masao Yamada, Masahito Kanamura, Toshihiro Ohki, Kozo Makiyama, Naoya Okamoto, Kenji Imanishi, Toshihide Kikkawa, Kazukiyo Joshin, Naoki Hara (Fujitsu Lab. Ltd.,) ED2008-218 MW2008-183 Link to ES Tech. Rep. Archives: ED2008-218 MW2008-183
Abstract (in Japanese) (See Japanese page) 
(in English) (Not available yet)
Keyword (in Japanese) (See Japanese page) 
(in English) / / / / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 376, ED2008-218, pp. 113-118, Jan. 2009.
Paper # ED2008-218 
Date of Issue 2009-01-07 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-218 MW2008-183 Link to ES Tech. Rep. Archives: ED2008-218 MW2008-183

Conference Information
Committee MW ED  
Conference Date 2009-01-14 - 2009-01-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor ICs, High-speed and high-frequency devices 
Paper Information
Registration To ED 
Conference Code 2009-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) C-band GaN-HEMT Power Amplifier with Over 300-W Output Power and Over 50-% Efficiency 
Sub Title (in English)  
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1st Author's Name Hisao Shigematsu  
1st Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab. Ltd.,)
2nd Author's Name Yusuke Inoue  
2nd Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab. Ltd.,)
3rd Author's Name Satoshi Masuda  
3rd Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab. Ltd.,)
4th Author's Name Masao Yamada  
4th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab. Ltd.,)
5th Author's Name Masahito Kanamura  
5th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab. Ltd.,)
6th Author's Name Toshihiro Ohki  
6th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab. Ltd.,)
7th Author's Name Kozo Makiyama  
7th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab. Ltd.,)
8th Author's Name Naoya Okamoto  
8th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab. Ltd.,)
9th Author's Name Kenji Imanishi  
9th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab. Ltd.,)
10th Author's Name Toshihide Kikkawa  
10th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab. Ltd.,)
11th Author's Name Kazukiyo Joshin  
11th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab. Ltd.,)
12th Author's Name Naoki Hara  
12th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab. Ltd.,)
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Speaker Author-1 
Date Time 2009-01-16 09:30:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2008-218, MW2008-183 
Volume (vol) vol.108 
Number (no) no.376(ED), no.377(MW) 
Page pp.113-118 
#Pages
Date of Issue 2009-01-07 (ED, MW) 


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